參數(shù)資料
型號: TMDS3788868
廠商: Texas Instruments, Inc.
英文描述: TMS370 MICROCONTROLLER FAMILY DATA BOOK
中文描述: TMS370微控制器系列數(shù)據(jù)手冊
文件頁數(shù): 50/78頁
文件大?。?/td> 919K
代理商: TMDS3788868
RELIABILITY STRESS TESTS
2–4
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
reliability stress tests
Accelerated stress tests are performed on new semiconductor products and process changes to qualify them
and to ensure excellence in product reliability. The following test environments are typical:
High-temperature operating life
Storage life
Temperature cycling
Biased humidity
Autoclave
Electrostatic discharge
Package integrity
Electromigration
Channel-hot electrons (performed on geometries of less than 2.0
μ
m)
Typical events or changes that require internal requalification of a product include the following:
New die design, shrink, or layout
Wafer process (baseline/control systems, flow, mask, chemicals, gases, dopants, passivation, or metal
systems)
Packaging assembly (baseline control systems or critical assembly equipment)
Piece parts (such as lead frame, mold compound, mount material, bond wire, or lead finish)
Manufacturing site
TI reliability control systems extend beyond qualification. Total reliability controls and management include
product reliability monitoring as well as final product release controls. Metal oxide semiconductor (MOS)
memories, utilizing high-density active elements, serve as the leading indicator in wafer-process integrity at TI
MOS fabrication sites, enhancing all MOS-logic device yields and reliability. Monthly, TI places several thousand
MOS devices on reliability tests to ensure and sustain built-in product excellence.
Table 1 lists the microprocessor and microcontroller reliability tests, the duration of the tests, and the size of the
samples. Table 2 contains definitions and descriptions of the terms used in these tests.
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