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RELIABILITY STRESS TESTS
2–6
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
Table 2. Definitions of Microprocessor Testing Terms
TERM
DEFINITION/DESCRIPTION
REFERENCES
Average Outgoing Quality (AOQ)
Amount of defective product in a population, usually expressed
in terms of parts per million (PPM)
Failure in Time (FIT)
Estimated field failure rate in number of failures per billion
power-on device hours; 1000 FITS equal 0.1% failures per
1000 device hours.
Operating Life
Device dynamically exercised at a high ambient temperature
(usually 125
°
C) to simulate field usage that would expose the
device to a much lower ambient temperature (such as 55
°
C).
Using a derived high temperature, a 55
°
C ambient failure rate
can be calculated.
Storage Life
Device exposed to 150
°
C unbiased condition. Bond integrity is
stressed in this environment.
Biased Humidity
Moisture and bias used to accelerate corrosion-type failures in
plastic
packages.
Conditions
temperature with 85% relative humidity (RH). Typical bias
voltage is 5 V and is grounded on alternating pins.
Plastic-packaged devices exposed to moisture at 121
°
C using
a pressure of one atmosphere above normal pressure. The
pressure forces moisture permeation of the package and
accelerates corrosion mechanisms (if present) on the device.
External package contaminants can also be activated and
caused to generate inter-pin current leakage paths.
include
85
°
C
ambient
Autoclave (Pressure Cooker)
Temperature Cycle
Device exposed to severe temperature extremes in an
alternating fashion (–65
°
C for 15 minutes and 150
°
C for
15 minutes per cycle) for at least 1000 cycles. Package
strength, bond quality, and consistency of assembly process
are tested in this environment.
Electrostatic Discharge (ESD)
Device exposed to electrostatic discharge pulses.
Calibration is according to MIL STD 883C, method 3015.6.
Devices are stressed to determine failure threshold of the
design.