參數(shù)資料
型號: TMDS3740855-02
廠商: Texas Instruments, Inc.
英文描述: TMS370 MICROCONTROLLER FAMILY DATA BOOK
中文描述: TMS370微控制器系列數(shù)據(jù)手冊
文件頁數(shù): 53/78頁
文件大小: 919K
代理商: TMDS3740855-02
RELIABILITY STRESS TESTS
2–7
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
Table 2. Definitions of Microprocessor Testing Terms (Continued)
TERM
DEFINITION/DESCRIPTION
REFERENCES
Thermal Shock
Test similar to the temperature cycle test, but involving a
liquid-to-liquid transfer.
MIL-STD-883C, Method 1011
Particle Impact Noise Detection
(PIND)
A nondestructive test to detect loose particles inside a device
cavity.
Mechanical Sequence
Fine and gross leak
Mechanical shock
PIND (optional)
Vibration, variable frequency
Constant acceleration
Fine and gross leak
Electrical test
MIL-STD-883C, Method 1014
MIL-STD-883C, Method 2002,
1500 g, 0.5 ms, Condition B
MIL-STD-883C, Method 2020
MIL-STD-883C, Method 2007,
20g, Condition A
MIL-STD-883C, Method 2001
MIL-STD-883C, Method 1014
To data sheet limits
Thermal Sequence
Fine and gross leak
Solder heat (optional)
Temperature cycle
(10 cycles minimum)
Thermal shock
(10 cycles minimum)
Moisture resistance
Fine and gross leak
Electrical test
MIL-STD-883C, Method 1014
MIL-STD-750C, Method 1014
MIL-STD-883C, Method 1010,
–65 to + 150
°
C, Condition C
MIL-STD-883C, Method 1011,
–55 to +125
°
C, Condition B
MIL-STD-883C, Method 1004
MIL-STD-883C, Method 1014
To data sheet limits
Thermal/Mechanical Sequence
Fine and gross leak
Temperature cycle
(10 cycles minimum)
Constant acceleration
Fine and gross leak
Electrical test
Electrostatic discharge
Solderability
Solder heat
Salt atmosphere
Lead pull
Lead integrity
Electromigration
Resistance to solvents
MIL-STD-883C, Method 1014
MIL-STD-883C, Method 1010,
–65 to +150
°
C, Condition C
MIL-STD-883C, Method 2001,
30 kg, Y1 Plane
MIL-STD-883C, Method 1014
To data sheet limits
MIL-STD-883C, Method 3015
MIL-STD-883C, Method 2033
MIL-STD-750C, Method 2031,
10 sec
MIL-STD-883C, Method 1009,
Condition A, 24 hrs min
MIL-STD-883C, Method 2004,
Condition A
MIL-STD-883C, Method 2004,
Condition B1
Accelerated stress testing of con-
ductor patterns to ensure accept-
able lifetime of power-on operation
MIL-STD-883C, Method 2015
Texas Instruments reserves the right to make changes in semiconductor test limits, procedures, or processes
without notice. Unless prior arrangements for notification have been make, TI advises all customers to verify
current test and manufacturing conditions prior to relying on published data.
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