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參數(shù)資料
| 型號： | TLV2344Y |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 運算放大器 |
| 英文描述： | QUAD OP-AMP, 10000 uV OFFSET-MAX, 1.7 MHz BAND WIDTH, UUC14 |
| 封裝： | DIE-14 |
| 文件頁數(shù)： | 20/42頁 |
| 文件大?。?/td> | 995K |
| 代理商： | TLV2344Y |
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Figure 43. Compensation for Input Capacitance
TLV2342, TLV2342Y, TLV2344, TLV2344Y
LinCMOS
LOW-VOLTAGE HIGH-SPEED
OPERATIONAL AMPLIFIERS
SLOS194 – FEBRUARY 1997
27
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
input characteristics (continued)
It is good practice to include guard rings around inputs (similar to those of Figure 38 in the Parameter
Measurement Information section). These guards should be driven from a low-impedance source at the same
voltage level as the common-mode input (see Figure 42).
The inputs of any unused amplifiers should be tied to ground to avoid possible oscillation.
–
+
–
+
–
+
(a) NONINVERTING AMPLIFIER
(b) INVERTING AMPLIFIER
(c) UNITY-GAIN AMPLIFIER
VO
VI
VO
Vi
VI
Figure 42. Guard-Ring Schemes
noise performance
The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stage
differential amplifier. The low input bias-current requirements of the TLV234x results in a very low noise current,
which is insignificant in most applications. This feature makes the device especially favorable over bipolar
devices when using values of circuit impedance greater than 50 k
, since bipolar devices exhibit greater noise
currents.
feedback
Operational amplifiers circuits nearly always
employ feedback, and since feedback is the first
prerequisite for oscillation, a little caution is
appropriate. Most oscillation problems result from
driving capacitive loads and ignoring stray input
capacitance. A small-value capacitor connected
in parallel with the feedback resistor is an effective
remedy (see Figure 43). The value of this
capacitor is optimized empirically.
electrostatic-discharge protection
The TLV234x incorporates an internal electrostatic-discharge (ESD)-protection circuit that prevents functional
failures at voltages up to 2000 V as tested under MIL-PRF-38535. Method 3015.2. Care should be exercised,
however, when handling these devices as exposure to ESD may result in the degradation of the device
parametric performance. The protection circuit also causes the input bias currents to be temperature dependent
and have the characteristics of a reverse-biased diode.
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相關代理商/技術(shù)參數(shù) |
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| TLV2352ID | 功能描述:校驗器 IC Dual Differential RoHS:否 制造商:STMicroelectronics 產(chǎn)品: 比較器類型: 通道數(shù)量: 輸出類型:Push-Pull 電源電壓-最大:5.5 V 電源電壓-最小:1.1 V 補償電壓（最大值）:6 mV 電源電流（最大值）:1350 nA 響應時間: 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-70-5 封裝:Reel |
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| TLV2352IDR | 功能描述:校驗器 IC Dual Lo-Vltg LinCMOS Differential RoHS:否 制造商:STMicroelectronics 產(chǎn)品: 比較器類型: 通道數(shù)量: 輸出類型:Push-Pull 電源電壓-最大:5.5 V 電源電壓-最小:1.1 V 補償電壓（最大值）:6 mV 電源電流（最大值）:1350 nA 響應時間: 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-70-5 封裝:Reel |
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