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參數(shù)資料
| 型號(hào)： | TISPPBL3DR |
| 廠商： | BOURNS INC |
| 元件分類： | 保護(hù)電路 |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) |
| 中文描述： | TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 |
| 封裝： | PLASTIC, MS-012, SO-8 |
| 文件頁(yè)數(shù)： | 9/14頁(yè) |
| 文件大小： | 356K |
| 代理商： | TISPPBL3DR |
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OCTOBER 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
APPLICATIONS INFORMATION
Maximum TIPX and RINGX Terminal Ratings (continued)
TISPPBL3 Programmable Protector
The third group, headed by the PBL 386 20/2 SLIC, has the same positive polarity withstand as the PBL 3762A/2 group. In the negative
polarity, the output can withstand -80 V continuously. For 10 ms, the output can withstand a voltage of VBat - 10 V. For 1
μ
s, the output can
withstand a voltage of VBat - 25 V. For 250 ns, the output is able to withstand a voltage of VBat -35 V.
Protection Requirements To Cover All SLICs
To protect all SLICs, the TISPPBL3 protector must limit the voltage to the lowest withstand levels of the three SLIC groups shown in Figure 7.
Figure 8 shows that this will be the positive polarity rating of the PBL 3766 group and the negative rating of the PBL 386 20/2 group.
Figure 8. SLIC Voltage Ratings
Time
AI6XBDD
V
VBat - 70
VBat - 60
VBat - 50
VBat - 40
VBat - 30
VBat - 20
VBat - 10
VBat
SLIC GROUP VOLTAGE RATINGS
vs
TIME
0
10
20
30
40
PBL 386 20/2 GROUP
PBL3762A/2 AND
PBL3766 GROUPS
1
μ
s
0.25
μ
s
PBL3762A/2 AND
PBL386 20/2 GROUPS
PBL 3766 GROUP
10 ms
TISPPBL3 Voltage Limiting Performance
Figure 9 shows how the TISPPBL3 protection voltages compare to the minimum voltage withstands of Figure 8. The two shaded areas
represent the positive and negative maximum limiting voltage levels of the TISPPBL3 from Figure 2. The isolation diode voltage drop displaces
the TISPPBL3 negative limiting voltage 1
μ
s, -20 V pulse area by -0.7 V from VBat. So the actual negative limiting voltage is -20.7 V relative to
VBat. This value does not exceed any part of the SLIC minimum negative voltage ratings. Any negative voltage disturbance in the VB supply
caused by TISPPBL3 gate current will be tracked in VBat by conduction of the isolation diode D1. So a negative going change in VB does not
substantially increase the TIPX and RINGX voltage stress relative to VBat. However, the absolute value of VBat with respect to ground must be
kept within the data sheet rating. In the positive polarity, the TISPPBL3 limits the maximum voltage to 8 V in a 1
μ
s period and between 1 V
and 5 V for a 10 ms period. These values do not exceed any of the SLIC minimum positive voltage ratings.
The TISPPBL3 supports negative supply voltages (VB) down to -150 V. In addition, there are maximum cathode overshoot voltages of -20 V
and +8 V. These conditions require the TISPPBL3 to have an off-state rated voltage, VDRM, of -170 V (-150 + -20 = -170) and a gate-cathode
rated voltage, VGKRM, of -160 V (-150 - +8 = -158) over the temperature range.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISPPBL3DR-S | 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL3D-S | 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL3-S | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL3SE | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL3SE-S | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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