參數(shù)資料
型號: TISP83121D
廠商: Power Innovations International, Inc.
英文描述: DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR
中文描述: 雙門單向過壓保護(hù)
文件頁數(shù): 2/7頁
文件大?。?/td> 134K
代理商: TISP83121D
TISP83121D
DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR
FEBRUARY 1999
2
P R O D U C T I N F O R M A T I O N
absolute maximum ratings
RATING
SYMBOL
V
DRM
VALUE
100
UNIT
V
Repetitive peak off-state voltage, 0 °C to 70 °C
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/1000 μs (GR-1089-CORE, open-circuit voltage wave shape 10/1000 μs)
5/310 μs (CCITT K20/21, open-circuit voltage wave shape 7 kV10/700 μs)
8/20 μs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 μs)
Non-repetitive peak on-state current, 50 Hz, halfwave rectified sinewave, (see Notes 1 and 2)
100 ms
1 s
900 s
Junction temperature
Storage temperature range
I
TSP
A
150
150
500
I
TSM
22
8
3
A
T
J
T
stg
-40 to +150
-65 to +150
°C
°C
NOTES: 1. Initially the protector must be in thermal equilibrium with 0 °C < T
J
< 70 °C. The surge may be repeated after the device returns to
its initial conditions. For operation at the rated current value, pins 1, 4, 5 and 8 must be connected together.
2. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
electrical characteristics, T
J
= 25 °C (unless otherwise noted)
PARAMETER
Off-state current
Repetitive peak off-state
current
TEST CONDITIONS
MIN
TYP
MAX
1
UNIT
μA
I
D
V
d
= 70 V, I
G
= 0
I
DRM
V
d
= V
DRM
= 100 V, I
G
= 0, 0 °C to 70 °C
10
μA
I
H
Holding current
I
T
= 1 A, di/dt = -1A/ms
T
J
= 0 to 70 °C
T
J
= 25 °C
T
J
= 70 °C
90
60
300
mA
I
R
Reverse current
Gate G1 trigger current
Gate G2 trigger current
G1-K trigger voltage
G2-A trigger voltage
Anode to cathode off-
state capacitance
V
R
= 0.3 V
I
T
= +1 A, t
p(g)
= 20 μs
I
T
= +1 A, t
p(g)
= 20 μs
I
T
= +1 A, t
p(g)
= 20 μs
I
T
= +1 A, t
p(g)
= 20 μs
1
mA
mA
mA
V
V
I
G1T
I
G2T
V
G1T
V
G2T
+200
-180
+1.8
-1.8
C
AK
f = 1 MHz, V
d
= 1 V
RMS
, V
D
= 5 V, I
G
= 0 (see Note 3)
100
pF
NOTE
3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are decoupled to the guard terminal of the bridge.
thermal characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R
θ
JA
Junction to free air thermal resistance
T
A
= 25 °C, EIA/JESD51-3 PCB,
EIA/JESD51-2 environment, I
T
= I
TSM(900)
105
°C/W
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