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參數(shù)資料
| 型號(hào)： | TISP83121D |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR |
| 中文描述： | 雙門單向過壓保護(hù) |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 134K |
| 代理商： | TISP83121D |
TISP83121D
DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
FEBRUARY 1999
Copyright 1999, Power Innovations Limited, UK
OVERVOLTAGE PROTECTION FOR DUAL-VOLTAGE RINGING SLICS
G
Programmable Protection Configurations up
to ±100 V
G
Typically 5 Lines Protected by Two
TISP83121D + Diode Steering Networks
G
High Surge Current
- 150 A 10/1000 μs
- 150 A 10/700 μs
- 500 A 8/20 μs
G
Pin compatible with the LCP3121
- Functional Replacement in Diode Steering
Network Applications
- 50% more surge current
G
Small Outline Surface Mount Package
- Available Ordering Options
description
The TISP83121D is a dual-gate reverse-blocking
unidirectional
thyristor
protection
of
dual-voltage
(Subscriber Line Interface Circuits) against
overvoltages on the telephone line caused by
lightning, a.c. power contact and induction.
designed
for
the
ringing
SLICs
The device chip is a four-layer NPNP silicon
thyristor structure which has an electrode
connection
to
every
overvoltage protection the TISP83121D is used
in a common anode configuration with the
voltage to be limited applied to the cathode (K)
terminal and the negative reference potential
applied to the gate 1 (G1) terminal. For positive
overvoltage protection the TISP83121D is used
in a common cathode configuration with the
voltage to be limited applied to the anode (A)
terminal and the positive reference potential
applied to the gate 2 (G2) terminal.
layer.
For
negative
The TISP83121D is a unidirectional protector
and to prevent reverse bias, requires the use of a
series diode between the protected line
conductor and the protector. Further, the gate
reference
supply
voltage
appropriately poled series diode to prevent the
requires
an
supply
TISP83121D crowbars.
from
being
shorted
when
the
Under low level power cross conditions the
TISP83121D gate current will charge the gate
reference supply. If the reference supply cannot
absorb the charging current its potential will
increase, possibly to damaging levels. To avoid
excessive voltage levels a clamp (zener or
avalanche breakdown diode) may be added in
shunt with the supply. Alternatively, a grounded
collector emitter-follower may be used to reduce
the charging current by the transistors H
FE
value.
This monolithic protection device is made with a
ion-implanted epitaxial-planar technology to give
a consistent protection performance and be
virtually transparent to the system in normal
operation.
CARRIER
Tube
Taped and reeled
PART #
TISP83121D
TISP83121DR
device symbol
K
G1
G2
SD6XAKA
A
MD6XAYA
D PACKAGE
(TOP VIEW)
For operation at the rated current values connect
pins 1, 4, 5 and 8 together.
1
2
3
4
5
6
7
8
K
A
A
K
K
K
G1
G2
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| TISPPBL1D | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS |
| TISPPBL1P | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP83121DR | 功能描述:SCR Dual Gate Unidirectional RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP83121DR-S | 功能描述:SCR Dual Gate Unidirectional RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP83121D-S | 功能描述:SCR Dual Gate Unidirectional RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP9110LDM | 功能描述:SCR OVER VOLTAGE PROT RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP9110LDMR-S | 功能描述:SCR Dual Polarity SLIC RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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