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參數(shù)資料
| 型號(hào)： | TISP61060P |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 中文描述： | 雙遠(yuǎn)期導(dǎo)電的P -可編程門晶閘管過(guò)壓保護(hù) |
| 文件頁(yè)數(shù)： | 7/14頁(yè) |
| 文件大小： | 286K |
| 代理商： | TISP61060P |
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7
SEPTEMBER 1995 - REVISED SEPTEMBER 1997
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
P R O D U C T I N F O R M A T I O N
thyristor to switch into the low-voltage on-state condition. At the end of the negative half cycle, the thyristor
switches off when the current falls below the holding current value (300 mA). Switch-off and re-clipping at
-52 V causes a second pulse of gate current. The wire current drawn by the protector is quasi-sinusoidal
During the positive a.c. voltage period (diode clipping) there is no gate current. During the negative a.c.
voltage period there are two triangular pulses of gate current, which peak at about 80 mA. This is current
which flows into the gate terminal as indicated by the I
G
current arrow in Figure 2. This direction of current
charges the V
BAT
supply. This would not be a problem if the V
BAT
supply was a rechargeable battery.
However, often the supply is generated from a switching mode power supply or the SLIC supply feed has a
series diode which blocks reverse (charging) current flow to the battery. In these cases the supply can only
sink current in the direction shown by the I
BAT
arrow in Figure 2. Unless the SLIC current, I
SLIC
, is equal or
greater than I
G
the value of V
BAT
will increase, possibly to a level which causes destruction of the SLIC.
The maximum average value of I
G
occurs when the thyristor only clips the voltage and the peak cathode
current is just beginning to approach the switching (I
S
) value, see Figure 4. The average current is maximised
under high source impedance conditions (e.g. 600
). In the case of the LB1201AB, it is recommended that
the supply should be able to absorb 700 mA of “wrong way” current. If the supply cannot absorb the current
then a shunt breakdown diode is recommended to provided a path for the gate current to ground (D2 in
Figure 2). High power diodes are expensive, so diode D2 is usually low power, purposely selected to fail
under this a.c. condition and protect the SLIC.
Figure 3. IC PROTECTOR POWER CROSS WAVE FORMS
Time - ms
0
5
10
15
20
IK
-750
-500
-250
0
250
500
750
IG
-100
-75
-50
-25
0
25
50
75
100
Time - ms
0
5
10
15
20
V
-60
-50
-40
-30
-20
-10
0
10
V
G
V
K
I
K
I
G
AI6XAG
相關(guān)PDF資料 |
PDF描述 |
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| TISP61089A | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089SDR | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089S | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089SD | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089 | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP61060PS | 制造商:Bourns Inc 功能描述: |
| TISP61060P-S | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089 | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089A | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089AD | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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