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參數(shù)資料
| 型號(hào)： | TISP61060P |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 中文描述： | 雙遠(yuǎn)期導(dǎo)電的P -可編程門晶閘管過(guò)壓保護(hù) |
| 文件頁(yè)數(shù)： | 6/14頁(yè) |
| 文件大?。?/td> | 286K |
| 代理商： | TISP61060P |
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TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
SEPTEMBER 1995 - REVISED SEPTEMBER 1997
6
P R O D U C T I N F O R M A T I O N
ic based protectors
In 1986, an IC based gated protector was proposed (A 90 V Switching Regulator and Lightning Protection
Chip Set, Robert K. Chen, Thomas H. Lerch, Johnathan S. Radovsky, D. Alan Spires, IEEE Solid-State
Circuits Conference, February 20, 1986, pp 178/9 and pp 340/1). Commercially, this resulted in the AT&T
Microelectronics LB1201AB device and the higher current Texas Instruments Inc. TCM1060 device
This implementation consisted of four diodes and two high holding current thyristors. Positive overvoltages on
the line wires are clipped to ground by forward conduction of the wire to ground diodes. Negative
overvoltages are initially clipped close to the SLIC negative supply rail, V
BAT
, by conduction of the thyristor
cathode-gate and gate series diode. This means that the protection voltage level for slow wave forms will be
about 1.5 V lower than the SLIC supply voltage. If sufficient current is available from the overvoltage, then the
thyristor will switch into a low voltage on-state condition. When the thyristor crowbars, the two series gate
diodes prevent the SLIC supply from being shorted to ground via the thyristor gate. As the overvoltage
subsides the high holding current of the crowbar prevents d.c. latchup (see Figure 1).
impulse protection performance
The impulse protection voltage will be the sum of the gate supply (V
BAT
) and the impulse peak gate-cathode
voltage (V
GK(BO)
). Capacitor C1 provides the pulse of gate current that occurs during fast rising impulses.
The protection voltage will be increased if there is a long connection between the gate decoupling capacitor,
C1, and the gate terminal. During the initial rise of a fast impulse (e.g. 2/10), the gate current (I
G
) is the same
as the cathode current (I
K
). Rates of 70 A/μs can cause inductive voltages of 0.7 V in 2.5 cm of printed wiring
track. To minimise this inductive voltage increase of protection voltage, the length of the capacitor to gate
terminal tracking should be minimised. Inductive voltages in the protector cathode wiring can increase the
protection voltage. These voltages can be minimised by routing the SLIC connection through the protector as
shown in Figure 2.
a.c. protection performance
Figure 2 shows a typical a.c. power cross test circuit. A variable voltage a.c. source is applied to the line card
via 600
series resistors. On the line card there are further series resistors R1 and R2. These resistors
provide over-current protection by fusing or going high resistance under high current a.c. conditions.
Figure 3 shows the gate and cathode a.c. power line cross voltage and current wave forms of the IC based
protector. Positive voltages are clipped at about +1 V by diode conduction. Negative voltages are clipped to
about -52 V as the SLIC supply voltage was -50 V. Sufficient current (200 mA) was available to cause the
Figure 2. SIMPLIFIED IC BASED SLIC PROTECTOR CIRCUIT
R1
50
RING
WIRE
TIP
WIRE
Th4
Th5
SLIC
IC BASED
SLIC
PROTECTOR
V
BAT
C1
100 nF
AI6XAD
600
600
A.C.
GENERATOR
0 - 600 Vrms
SWITCHING MODE
POWER SUPPLY
GENERATOR
SOURCE
RESISTANCE
I
BAT
I
G
I
SLIC
C2
D1
D2
Tx
R2
50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TISP61089A | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089SDR | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089S | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089SD | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089 | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP61060PS | 制造商:Bourns Inc 功能描述: |
| TISP61060P-S | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089 | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089A | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089AD | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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