參數(shù)資料
型號: TISP4XX0T3BJ
廠商: Bourns Inc.
英文描述: BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
中文描述: 雙向可控硅過電壓保護器
文件頁數(shù): 2/9頁
文件大?。?/td> 165K
代理商: TISP4XX0T3BJ
DECEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Description (Continued)
After a TIA/EIA-IS-968 Type B surge the equipment must be operational. As the TISP4350T3BJ has a current rating of 120 A, it will survive both
Type B surges, metallic (25 A, 9/720) and longitudinal (37.5 A, 9/720), giving an operational pass to FCC Part 68 Type B surges.
TISP4xx0T3BJ Overvoltage Protector Series
Overload Ratings, TA = 25
°
C (Unless Otherwise Noted)
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
The TIA/EIA-IS-968 B type ringer has voltages of 56.5 V d.c. and up to 150 V rms a.c., giving a peak voltage of 269 V The TISP4350T3BJ will
not clip the B type ringing voltage as it has a high impedance up to 275 V.
Rating
Symbol
Value
See Figure 4
for current
versus time
Unit
Peak overload on-state current, a.c. power line cross tests UL 60950 (see Note 4)
I
T(OV)M
A rms
NOTE
4: These electrical stress levels may damage the device silicon chip. After test, the pass criterion is either that the device is
functional or, if it is faulty, that it has a short circuit fault mode. In the short circuit fault mode, the following equipment is protected
as the device is a permanent short across the line. The equipment would be unprotected if an open circuit fault mode developed.
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage (see Note 1)
’4290T3
’4350T3
V
DRM
±
220
±
275
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
I
PPSM
A
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
250
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
250
10/160 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 voltage wave shape)
150
5/310 (ITU-T K.44, 10/700 voltage wave shape used in K.20/45/21)
120
5/320 (TIA/EIA-IS-968 (replaces FCC Part 68), 9/720 voltage wave shape)
120
10/560 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 voltage wave shape)
100
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
80
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
I
TSM
25
30
2.1
A
20 ms (50 Hz), full sine wave
16.7 ms (60 Hz), full sine wave
1000 s 50 Hz/60 Hz
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A
di
T
/dt
T
J
T
stg
500
A/
μ
s
Junction temperature
-40 to +150
°
C
Storage temperature range
-65 to +150
°
C
NOTES: 1. Initially, the device must be in thermal equilibrium with T
J
= 25
°
C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/
°
C for ambient temperatures above 25
°
C.
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