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參數(shù)資料
| 型號： | TIM1011-2L |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 144K |
| 代理商： | TIM1011-2L |
2
TIM1011-2L
ABS OLUT E MAX IMUM RAT INGS ( T a= 25
°
C )
CHARACTERISTICS
SYMBOL
RATING
UNIT
Drain-Source Voltage
V
DS
15
V
Gate-Source Voltage
V
GS
-5
V
Drain Current
I
DS
2.6
A
Total Power Dissipation (Tc= 25
°
C)
Channel Temperature
P
T
15
W
°
C
°
C
T
ch
175
Storage
T
stg
-65
～
+175
PACKAGE OUTLINE (2-9D1B)
HANDLING PRE CAUTIONS FOR PACK AGE D TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
4-R2.4
0.5
±
0.15
13.0
±
0.3
17.0 MAX.
d
9
±
0
2
±
0
2
2
c
d
0
1
±
0
1
±
0
8.5 MAX.
0
3
-
+
e
c
Gate
d
Source
e
Drain
Unit : mm
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PDF描述 |
|---|---|
| TIM1112-8 | MICROWAVE POWER GaAs FET |
| TIM3742-4SL | MICROWAVE POWER GAAS FET |
| TIM5359-8SL | MICROWAVE POWER GaAs FET |
| TIM5964-16SL | MICROWAVE POWER GaAs FET |
| TIM5964-45SL | MICROWAVE POWR GaAs FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIM1011-2UL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 11GHZ, 15W - Trays |
| TIM1011-4L | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 11GHZ, 30W - Trays |
| TIM1011-4UL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 11GHZ, 15W - Trays |
| TIM1011-5L | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 11GHZ, 30W - Trays |
| TIM1011-8L | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 11GHZ, 60W - Trays |
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