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參數(shù)資料
| 型號： | TEA1094T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | Hands free IC |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, PDSO28 |
| 封裝： | 7.50 MM, PLASTIC, MS-013AE, SOT-136-1, SO-28 |
| 文件頁數(shù)： | 16/28頁 |
| 文件大?。?/td> | 221K |
| 代理商： | TEA1094T |
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1996 Jul 15
16
Philips Semiconductors
Product specification
Hands free IC
TEA1094; TEA1094A
D
YNAMIC LIMITER
t
att
attack time when V
RIN
jumps from
20 mV to 20 mV + 10 dB
release time when V
RIN
jumps
from 20 mV + 10 dB to 20 mV
total harmonic distortion at
V
RIN
= 20 mV + 10 dB
V
BB
limiter threshold
attack time when V
BB
jumps below
V
BB(th)
M
UTE RECEIVE
R
GAR
= 374 k
5
ms
t
rel
R
GAR
= 374 k
250
ms
THD
R
GAR
= 374 k
; t
>
t
att
0.9
5
%
V
BB(th)
t
att
2.9
1
V
ms
V
DLC(th)
threshold voltage required on pin
DLC/MUTER to obtain mute
receive condition
threshold current sourced by
pin DLC/MUTER in mute receive
condition
voltage gain reduction in mute
receive condition
V
GND
0.4
0.2
V
I
DLC(th)
V
DLC
= 0.2 V
100
μ
A
G
vrxm
V
DLC
<
0.2 V
80
dB
Envelope and noise detectors (TSEN, TENV, RSEN, RENV, RNOI and TNOI)
P
REAMPLIFIERS
G
v(TSEN)
G
v(RSEN)
voltage gain from MIC to TSEN
voltage gain between RIN1 and
RIN2 to RSEN
37.5
2.5
40
0
42.5
+2.5
dB
dB
L
OGARITHMIC COMPRESSOR AND SENSITIVITY ADJUSTMENT
V
det(TSEN)
sensitivity detection on pin TSEN;
voltage change on pin TENV
when doubling the current from
TSEN
V
det(RSEN)
sensitivity detection on
pin RSEN; voltage change on
pin RENV when doubling the
current from RSEN
I
TSEN
= 0.8 to 160
μ
A
18
mV
I
RSEN
= 0.8 to 160
μ
A
18
mV
S
IGNAL ENVELOPE DETECTORS
I
source(ENV)
maximum current sourced from
pin TENV or RENV
maximum current sunk by
pin TENV or RENV
voltage difference between
pins RENV and TENV
120
μ
A
I
sink(ENV)
0.75
1
1.25
μ
A
V
ENV
when 10
μ
A is sourced
from both RSEN and
TSEN; envelope detectors
tracking; note 3
±
3
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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