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參數(shù)資料
| 型號： | TF218 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Capacitor Microphone Applications |
| 中文描述： | 電容器麥克風的應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 30K |
| 代理商： | TF218 |
TF218
No.7088-1/4
Capacitor Microphone Applications
Features
Ultrasmall package facilitates miniaturization in end
products.
Especially suited for use in audio, telephone capacitor
microphones.
Excellent voltage characteristic.
Excellent transient characteristic.
Adoption of FBET process.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
V
mA
mA
mW
°
C
°
C
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
--20
10
1
100
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
V(BR)GDO
VGS(off)
IDSS
yfs
Ciss
Crss
IG=--100
μ
A
VDS=5V, ID=1
μ
A
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
--20
--0.2
140*
0.5
V
V
μ
A
mS
pF
pF
--0.6
--1.0
350*
1.0
3.5
0.65
Continued on next page.
* : The TF218 is classified by IDSS as follows : (unit :
μ
A)
Marking
IDSS
140 to 240
A4
A5
210 to 350
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7088
TF218
Package Dimensions
unit : mm
2201
[TF218]
N3001 TS IM TA-3366
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-channel Silicon Junction FET
1.4
1
0
0
0
0
0.25
0.2
0.45
0
0.1
0
1
2
1
(Top view)
2
3
3
1 : Drain
2 : Source
3 : Gate
SANYO : VSFP
(Bottom view)
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