參數資料
型號: TEA1094A
廠商: NXP SEMICONDUCTORS
元件分類: 通信及網絡
英文描述: Hands free IC
中文描述: SPECIALTY TELECOM CIRCUIT, PDIP24
封裝: 0.600 INCH, PLASTIC, MO-015AD, SOT-101-1, DIP-24
文件頁數: 15/28頁
文件大小: 221K
代理商: TEA1094A
1996 Jul 15
15
Philips Semiconductors
Product specification
Hands free IC
TEA1094; TEA1094A
T
RANSMIT MUTE INPUT
MUTET
V
IL
V
IH
I
MUTET
G
vtxm
LOW level input voltage
HIGH level input voltage
input current
voltage gain reduction with
MUTET active
V
GND
0.4
1.5
0.3
V
BB
+ 0.4
5
V
V
μ
A
dB
2.5
80
MUTET = HIGH
MUTET = HIGH
Loudspeaker channel (RIN1, RIN2, GAR, LSP and DLC/MUTER)
L
OUDSPEAKER AMPLIFIER
|
Z
i
|
input impedance
between pins RIN1 or RIN2
and GND
between pins RIN1 and
RIN2
V
RIN
= 20 mV (RMS)
17
20
23
k
34
40
46
k
G
vrx
voltage gain in receive mode;
between RIN1 and RIN2 to LSP
voltage gain adjustment with R
GAR
voltage gain variation with
temperature referenced to 25
°
C
voltage gain variation with
frequency referenced to 1 kHz
maximum input voltage between
RIN1 and RIN2 (RMS value)
noise output voltage at pin LSP
(RMS value)
16
18.5
21
dB
G
vrxr
G
vrxT
18.5
±
0.3
+14.5
dB
dB
V
RIN
= 20 mV (RMS);
T
amb
=
25 to +75
°
C
V
RIN
= 20 mV (RMS);
f = 300 to 3400 Hz
R
GAR
= 11.8 k
; for 2%
THD in input stage
inputs RIN1 and RIN2
short-circuited through
200
in series with 10
μ
F;
psophometrically weighted
(P53 curve)
G
vrxf
±
0.3
dB
V
RIN(rms)
390
mV
V
norx(rms)
80
μ
V
CMRR
G
vrxv
common mode rejection ratio
voltage gain variation related to
R
VOL
= 950
50
3
dB
dB
when total attenuation does
not exceed the switching
range
O
UTPUT CAPABILITY
V
OSE(p-p)
output voltage
(peak-to-peak value)
V
RIN
= 300 mV (RMS);
note 1
V
RIN
= 150 mV (RMS);
R
GAR
= 374 k
; R
L
= 33
;
V
BB
= 9.0 V; note 2
3.5
4.5
V
7.5
V
I
OM
maximum output current at LSP
(peak value)
150
500
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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