參數(shù)資料
型號(hào): TE28F320J3C
廠商: Intel Corp.
英文描述: Intel StrataFlash Memory (J3)
中文描述: 英特爾StrataFlash存儲(chǔ)器(J3)
文件頁數(shù): 56/72頁
文件大?。?/td> 905K
代理商: TE28F320J3C
256-Mbit J3 (x8/x16)
56
Datasheet
Device Geometry Definition
A.7
Primary-Vendor Specific Extended Query Table
Certain flash features and commands are optional. The
Primary Vendor-Specific Extended Query
table specifies this and other similar information.
2Ch
1
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with one or
more contiguous same-size erase blocks
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
Erase Block Region 1 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
2C:
--01
1
2Dh
4
2D:
2E:
2F:
30:
Table 29. Device Geometry Definition (Sheet 2 of 2)
Offset
Length
Description
Code See Table
Below
Address
27:
28:
29:
2A:
2B:
2C:
2D:
2E:
2F:
30:
32 Mbit
--16
--02
--00
--05
--00
--01
--1F
--00
--00
--02
64 Mbit
--17
--02
--00
--05
--00
--01
--3F
--00
--00
--02
128 Mbit
--18
--02
--00
--05
--00
--01
--7F
--00
--00
--02
256Mbit
--19
--02
-00
-05
-00
-01
-FF
--00
--00
--02
Table 30. Primary Vendor-Specific Extended Query (Sheet 1 of 2)
Offset
(1)
P = 31h
(P+0)h
(P+1)h
(P+2)h
(P+3)h
(P+4)h
Length
Description
(Optional Flash Features and Commands)
Primary extended query table
Unique ASCII string “PRI”
Add.
Hex
Code
--50
--52
--49
--31
--31
Value
3
31:
32:
33:
34:
35:
“P”
“R”
“I”
“1”
“1”
1
1
Major version number, ASCII
Minor version number, ASCII
相關(guān)PDF資料
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TE28F320J3C-115 Intel StrataFlash Memory (J3)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F320J3C110 制造商:Intel 功能描述:
TE28F320J3C-110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
TE28F320J3C110SL7H8 功能描述:IC FLASH 32MBIT 110NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:512M(64M x 8) 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
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TE28F320J3C-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)