參數(shù)資料
型號(hào)： TDA6500
廠商： NXP Semiconductors N.V.
英文描述： 5 V mixer/oscillator and synthesizer for PAL and NTSC standards
中文描述： 5 V型混合機(jī)/振蕩器和合成器PAL和NTSC制式標(biāo)準(zhǔn)
文件頁(yè)數(shù)： 18/37頁(yè)
文件大?。?/td> 223K
代理商： TDA6500
9397 750 15057
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 14 June 2005
18 of 37
Philips Semiconductors
TDA6500; TDA6501
5 V mixer/oscillator and synthesizer for PAL and NTSC standards
[1]
The RF frequency range is defined by the oscillator frequency range and the Intermediate Frequency (IF).
[2]
This is the level of the RF unwanted signal, 50 % amplitude modulated with 1 kHz, that causes a 1.1 kHz FM modulation of the local
oscillator and thus of the wanted signal; V
wanted
= 100 dB
μ
V; f
unwanted
= f
wanted
+ 5.5 MHz. The FM modulation is measured at the
oscillator output with a peeking coil using a modulation analyzer with a peak-to-peak detector and a post detection filter of
300 Hz up to 3 kHz.
[3]
Channel SO2 beat is the interfering product of f
RFpix
, f
IF
and f
osc
of channel SO2; f
beat
= 37.35 MHz. The possible mechanisms are:
f
osc
2
×
f
IF
or 2
×
f
RFpix
f
osc
. For the measurement V
o(IFOUT)
= V
RFpix
= 115 dB
μ
V.
G
v
voltage gain
f
RF
= 157 MHz; see
Figure 13
f
RF
= 443 MHz; see
Figure 13
f
RF
= 157 MHz; see
Figure 14
f
RF
= 443 MHz; see
Figure 14
f
RF
= 157 MHz; see
Figure 15
f
RF
= 443 MHz; see
Figure 15
35
35
-
-
108
108
38
38
6
6
111
111
41
41
8.0
8.0
-
-
dB
dB
dB
dB
dB
μ
V
dB
μ
V
NF
noise figure (not corrected
for image)
V
o(mod)
output voltage causing
0.3 % cross modulation in
channel
output voltage causing
1.1 kHz incidental FM
V
o(FM)
f
RF
= 157 MHz
f
RF
= 443 MHz
f
RFwanted
= 443 MHz;f
osc
= 481.9 MHz;
f
RFunwanted
= 482 MHz
[2]
108
111
111
80
-
dB
μ
V
dB
μ
V
dB
μ
V
[2]
108
V
f(N+5)
1
(N + 5)
1 MHz pulling
[5]
72
-
Z
i
input impedance (R
S
+ jL
S
ω
) R
S
at f
RF
= 157 MHz; see
Figure 5
R
S
at f
RF
= 443 MHz; see
Figure 5
L
S
at f
RF
= 157 MHz; see
Figure 5
L
S
at f
RF
= 443 MHz; see
Figure 5
input level without lock-out
see
Figure 16
High band mixer in high band mode (P0 = 0 and P1 = 0); including IF amplifier
f
RF
RF frequency
G
v
voltage gain
-
-
-
-
25
25
13
13
-
-
-
-
-
120
nH
nH
dB
μ
V
V
i
[4]
-
picture carrier
f
RF
= 443 MHz; see
Figure 13
f
RF
= 863.25 MHz; see
Figure 13
f
RF
= 443 MHz; see
Figure 14
f
RF
= 863.25 MHz; see
Figure 14
f
RF
= 443 MHz; see
Figure 15
f
RF
= 863.25 MHz; see
Figure 15
[1]
455.25 -
35
35
-
-
108
108
855.25 MHz
41
41
8.0
9.0
-
-
38
38
6.0
7.0
111
111
dB
dB
dB
dB
dB
μ
V
dB
μ
V
NF
noise figure (not corrected
for image)
V
o(mod)
output voltage causing
0.3 % cross modulation in
channel
output voltage causing
1.1 kHz incidental FM
V
o(FM)
f
RF
= 443 MHz
f
RF
= 863.25 MHz
f
RFwanted
= 863.25 MHz;
f
osc
= 902.15 MHz;
f
RFunwanted
= 902.25 MHz
[2]
108
111
111
80
-
-
-
dB
μ
V
dB
μ
V
dB
μ
V
[2]
108
V
f(N+5)
1
(N + 5)
1 MHz pulling
[5]
72
Z
i
input impedance (R
S
+ jL
S
ω
) R
S
at f
RF
= 443 MHz; see
Figure 5
R
S
at f
RF
= 863.25 MHz; see
Figure 5
L
S
at f
RF
= 443 MHz; see
Figure 5
L
S
at f
RF
= 863.25 MHz; see
Figure 5
input level without lock-out
see
Figure 16
-
-
-
-
25
23
13
13
-
-
-
-
-
120
nH
nH
dB
μ
V
V
i
[4]
-
Table 20:
V
CC
= 5 V; T
amb
= 25
°
C; values are given for an IF amplifier with 500
load (measured as shown in
Figure 7
for the PAL
standard); unless otherwise specified.
Symbol
Parameter
Conditions
Mixer
…continued
Min
Typ
Max
Unit
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