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參數(shù)資料
| 型號： | TC58DAM82A1FT00 |
| 廠商： | Toshiba Corporation |
| 英文描述： | 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
| 中文描述： | 128兆位（16米x 8 BITS/8M x 16位）的CMOS NAND型E2PROM的 |
| 文件頁數(shù)： | 26/34頁 |
| 文件大?。?/td> | 369K |
| 代理商： | TC58DAM82A1FT00 |
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TC58DVM72A1FT00/ TC58DVM72F1FT00
TC58DAM72A1FT00/ TC58DAM72F1FT00
2003-01-24 26/34
(6)
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of
the block to MSB (most significant bit) page of the block. Random page address programming is prohibited.
(7)
Status Read during a Read operation
The device status can be read out by inputting the Status Read command “70H” in Read mode.
Once the device has been set to Status Read mode by a “70H” command, the device will not return to Read
mode.
Therefore, a Status Read during a Read operation is prohibited.
However, when the Read command “00H” is input during [A], Status mode is reset and the device returns
to Read mode. In this case, data output starts automatically from address N and address input is unnecessary
DATA IN: Data (1)
Page 0
Page 1
Data register
Page 2
Page 15
Page 31
(1)
(2)
(3)
(16)
(32)
Data (32)
From the LSB page to MSB page
DATA IN: Data (1)
Page 0
Page 1
Data register
Page 2
Page 15
Page 31
(2)
(16)
(3)
(1)
(32)
Data (32)
Ex.) Random page program (Prohibition)
Figure 17. page programming within a block
00
Address N
command
CE
WE
BY
/
RY
RE
[A]
Status Read
command input
Status Read
Status output
Figure 18.
70
00
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PDF描述 |
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| TC58DAM82F1FT00 | 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
| TC58DVM72A1F | 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
| TC58DVM72A1FT00 | 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
| TC58DVM72F1FT00 | 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
| TC58DVM82A1FT00 | 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC58DAM82F1FT00 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
| TC58DVG02A1FT | 功能描述:IC FLASH 1GBIT 50NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| TC58DVG02A1FT00 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC58DVG02A1FT00BBH | 制造商:Toshiba America Electronic Components 功能描述: |
| TC58DVG02A1FT00BBQ | 制造商:Toshiba America Electronic Components 功能描述: |
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