參數(shù)資料
型號: TC1268
廠商: Microchip Technology Inc.
英文描述: 500mA Fixed Output, Fast Response CMOS LDO with Shutdown
中文描述: 500mA的固定輸出,快速響應的CMOS LDO穩(wěn)壓器,帶有關斷
文件頁數(shù): 2/12頁
文件大?。?/td> 448K
代理商: TC1268
TC1268
DS21379B-page 2
2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage .........................................................6.5V
Power Dissipation................Internally Limited
(Note 6)
Maximum Voltage on Any Pin ........V
IN
+0.3V to -0.3V
Operating Temperature ...............-40°C < T
J
< +125°C
Storage Temperature..........................-65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1268 ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
V
IN
= V
OUT
+ 1V, I
L
= 100
μ
A, C
L
= 3.3
μ
F, SHDN > V
IH
, T
A
= 25°C, unless otherwise noted.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
V
IN
I
OUT
MAX
V
OUT
Input Operating Voltage
Maximum Output Current
Output Voltage
2.7
500
6.0
V
Note 8
mA
V
V
R
– 2.5%
V
R
±0.5%
40
0.05
0.002
20
60
200
350
80
5
5
V
R
+ 2.5%
0.35
0.01
30
160
480
800
130
10
Note 1
V
OUT
/
T
V
OUT
/
V
IN
V
OUT
/V
OUT
V
IN
-V
OUT
V
OUT
Temperature Coefficient
Line Regulation
Load Regulation
Dropout Voltage
ppm/°C
%
%/mA
mV
Note 2
(V
R
+ 1V)
V
IN
6V
I
L
= 0.1mA to I
OUT
MAX
(Note 3)
I
L
= 100
μ
A
I
L
= 100mA
I
L
= 300mA
I
L
= 500mA
(Note 4)
SHDN = V
IH
, I
L
= 0
SHDN = 0V
V
IN
= 3.5V, V
OUT
= 2.5V
C
IN
= C
OUT
= 1
μ
F
I
L
= 250mA (See Figure 3-2)
V
IN
= 3.5V, V
OUT
= 2.5V
C
IN
= C
OUT
= 1
μ
F
I
L
= 250mA (See Figure 3-2)
F
RE
1kHz
V
OUT
= 0V
Note 5
I
L
= I
OUT
MAX
I
DD
I
SHDN
T
WK
Supply Current (Active Mode)
Supply Current (Shutdown Mode)
Wake-up Time
μ
A
μ
A
μ
sec
(from Shutdown Mode)
Settling Time
T
S
(from Shutdown Mode)
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Output Noise
15
μ
sec
PSRR
I
OUT
SC
V
OUT
/
P
D
eN
64
1200
0.04
260
dB
mA
V/W
nV/
Hz
1400
SHDN Input
V
IH
V
IL
Note 1:
2:
SHDN Input High Threshold
SHDN Input Low Threshold
45
15
%V
IN
%V
IN
V
R
is the regulator output voltage setting.
T
C
V
OUT
= (V
OUT
MAX
– V
OUT
MIN
) x 10
V
OUT
x
T
3:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from
0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation
specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops2% below its nominal value measured at a 1V
differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
at V
= 6V for T = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
, T
,
θ
). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
Hysteresis voltage is referenced to V
.
The minimum V
IN
has to justify the conditions: V
IN
V
R
+ V
DROPOUT
and V
IN
2.7V for I
L
= 0.1mA to I
OUT
MAX
.
4:
5:
6:
7:
8:
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