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參數(shù)資料
| 型號： | TC1174VUA |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 300mA CMOS LDO with Shutdown and VREF Bypass |
| 中文描述： | 300mA的CMOS LDO穩(wěn)壓器具有關(guān)斷和VREF繞道 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 444K |
| 代理商： | TC1174VUA |
TC1174
DS21363B-page 2
2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage .........................................................6.5V
Output Voltage..................(V
SS
– 0.3V) to (V
IN
+ 0.3V)
Power Dissipation................Internally Limited
(Note 5)
Maximum Voltage on Any Pin ........V
IN
+0.3V to -0.3V
Operating Temperature Range......-40°C < T
J
< 125°C
Storage Temperature..........................-65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1174 ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
V
IN
= V
OUT
+ 1V, I
L
= 0.1
μ
A, C
L
= 3.3
μ
F, SHDN > V
IH
, T
A
= 25°C, unless otherwise noted.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
V
IN
I
OUT
MAX
V
REF
V
OUT
/
T
V
OUT
/
V
IN
V
OUT
/V
OUT
V
IN
-V
OUT
Input Operating Voltage
Maximum Output Current
Reference Voltage
V
OUT
Temperature Coefficient
Line Regulation
Load Regulation
Dropout Voltage
2.7
300
1.165
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.20
40
0.05
1.1
20
80
270
50
0.05
60
550
0.04
260
6.0
—
1.235
—
0.35
2.0
30
160
480
90
0.5
—
650
—
—
V
Note 6
mA
V
ppm/°C
%
%
mV
Note 1
(V
R
+ 1V)
≤
V
IN
≤
6V
I
L
= 0.1mA to I
OUT
MAX
(Note 2)
I
L
= 0.1mA
I
L
= 100mA
I
L
= 300mA
(Note 3)
SHDN = V
IH
SHDN = 0V
F
RE
–
1kHz
V
OUT
= 0V
Note 4
F = 10kHz, I
L
= I
OUT
470pF from Bypass to GND
I
SS1
I
SS2
PSRR
I
OUT
SC
V
OUT
/
P
D
eN
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Output Noise
μ
A
μ
A
dB
mA
V/W
nV/
√
Hz
SHDN Input
V
IH
V
IL
ADJ Input
I
ADJ
SHDN Input High Threshold
SHDN Input Low Threshold
45
—
—
—
—
15
%V
IN
%V
IN
Adjustable Input Leakage Current
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
) x 10
6
V
OUT
x
T
—
50
—
pA
1:
2:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a
1V differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
at V
= 6V for T = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
, T
,
θ
). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
The minimum V
IN
has to justify the conditions: V
IN
≥
V
R
+ V
DROPOUT
and V
IN
≥
2.7V for I
L
= 0.1mA to I
OUT
MAX
.
3:
4:
5:
6:
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