參數(shù)資料
型號(hào): TB28F008S3-150
廠商: INTEL CORP
元件分類: DRAM
英文描述: BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
中文描述: 1M X 8 FLASH 2.7V PROM, 150 ns, PDSO44
封裝: 13.30 X 28.20 MM, PLASTIC, SOP-44
文件頁數(shù): 39/41頁
文件大?。?/td> 703K
代理商: TB28F008S3-150
E
6.8
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY
39
PRELIMINARY
Extended Temperature Operating Conditions
Except for the specifications given in this section, all DC and AC characteristics are identical to those give in
commercial temperature specifications. See the Section 6.2 for commercial temperature specifications.
Extended Temperature and V
CC
Operating Conditions
Symbol
Parameter
Notes
Min
Max
Unit
Test Condition
T
A
Operating Temperature
–40
+85
°C
Ambient Temperature
6.9
T
A
=
–40 °C to +85 °C
DC Characteristics
—Extended Temperature
2.7 V V
CC
3.3 V V
CC
Test
Sym
Parameter
Notes Typ
Max
Typ
Max
Unit
Conditions
I
CCD
V
CC
Deep Power-Down
Current
1
20
20
μ
A
RP# = GND ± 0.2 V
I
OUT
(RY/BY#) = 0 mA
NOTE:
1.
All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and speeds).
Contact Intel’s Application Support Hotline or your local sales office for information about typical specifications.
6.10
T
A
=
–40 °C to +85 °C
AC Characteristics
—Read-Only Operations
(1, 3)
—Extended Temperature
3.3 V ± 0.3 V V
CC
–150
Versions
(3)
2.7 V
3.6 V V
CC
–170
Unit
#
Sym
Parameter
Notes
Min
Max
Min
Max
R1
t
AVAV
Read Cycle Time
150
170
ns
R2
t
AVQV
Address to Output Delay
150
170
ns
R3
t
ELQV
CE# to Output Delay
2
150
170
ns
NOTES:
1.
2.
3.
See AC Input/Output Reference Waveform for maximum allowable input slew rate.
OE# may be delayed up to t
ELQV
t
GLQV
after the falling edge of CE# without impact on t
ELQV
.
See Ordering Informationfor device speeds (valid operational combinations).
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