參數(shù)資料
型號: TB28F008S3-150
廠商: INTEL CORP
元件分類: DRAM
英文描述: BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
中文描述: 1M X 8 FLASH 2.7V PROM, 150 ns, PDSO44
封裝: 13.30 X 28.20 MM, PLASTIC, SOP-44
文件頁數(shù): 28/41頁
文件大?。?/td> 703K
代理商: TB28F008S3-150
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY
E
28
PRELIMINARY
5.7
V
PP
Program and Erase
Voltages on Sub-0.4μ S3
Memory Family
Intel's byte-wide Smart 3 FlashFile memory
family provides in-system program/erase at 2.7 V
and 3.3 V V
PP
as well as faster factory
program/erase at 12 V V
PP
.
Future sub-0.4μ lithography Smart 3 FlashFile
memory products will also include a backward-
compatible 12 V programming feature. This mode,
however, is not intended for extended use. A 12 V
program/erase V
PP
can be applied for 1000 cycles
maximum per block or 80 hours maximum per
device. To ensure compatibility with future sub-0.4μ
Smart 3 FlashFile memory products, present
designs should not permanently connect V
PP
to
12 V. This will avoid device over-stressing that may
cause permanent damage.
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