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參數(shù)資料
| 型號： | TB1261F |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA BiCMOS INTEGRATED CIRCUIT, SILICON MONOLITHIC |
| 中文描述： | 東芝的BiCMOS集成電路，硅單片 |
| 文件頁數(shù)： | 45/66頁 |
| 文件大小： | 1544K |
| 代理商： | TB1261F |
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TB1261F/TB1262F
2002-6-30 45 / 66
Note
Y6
Items/Symbols
Black
Start Point
/ V
BLEX25
/ V
BLEX35
/ V
BLEX45
Black
AMP Gain
/ G
BLEX
Bus
conditions
Uni-Color:127
Color:0
Black stretch:
0/1/2/3
RGB Mute:0
R cut off:128
DC rest.:2(100%)
Others: Preset
Measurement methods
(1)Input a gray raster with sync to Pin61.
(2)Set black stretch to 25(IRE).
(3)Decreasing Y amplitude of input from 50(IRE), measure a Y
amplitude as the figure below, that is “V
BLEX25
”
(4)Set black stretch to 35(IRE)/45(IRE).
(5)Repeat (3), that is ‘V
BLEX35
”, “V
BLEX45
”.
(6)Find gain of the portion that the black stretch has an effect
on.
Expansion
Expansion
Black
stretch
=off
25/35/45IRE
#61 input
#14
output
V
BLEX25
Y7
DC
Gain
/ V
Dcrest120
/ V
Dcrest90
/ V
Dcrest step
Restoration
Uni-Color:127
Color:0
DC rest.: 0/1/2/3
RGB Mute:0
R cut off:128
Others: Preset
(1) Input a 100(IRE)(=0.7Vp-p) white signal with sync into
Pin38&39.
(2) Set DC rest. to 10.
(3) Measure a Y amplitude of pin20 output that is V100.
(4) Set DC rest to 00.
(5) Measure a Y amplitude of pin20 output that is V120.
(6) Calculate, “Vdcrest120” =(V120/V100)
×
100
(7) Set DC rest to 11.
(8) Repeat (5)&(6), that is “VDcrest90”.
(9) Calculate, “VDcrest step”=(Vdcrest120 - VDcrest90)/4
(1) Input a 120(IRE) ramp signal with sync into Pin61.
(2) Measure the DC voltage from cut-off level to peak(at which
output signal is clipped) that is "VWPS".
Y8
WPS Level
/ V
WPS
Uni-Color:127
Brightness:63
Color:0
RGB Mute:0
R cut off:128
DC rest.:2(100%)
WPS:0/1
Others: Preset
RGB Mute:0
VSM gain:3
Others: Preset
RGB Mute:0
c-trap=off
VSM gain:
0/1/2/3
Others: Preset
Y9
VSM Peak
Frequency
/F
VSM
VSM Gain
/ G
VSM 0
/ G
VSM -3
/ G
VSM -10
/ G
VSMOFF
(1) Input 100mV(p-p) sweep signal to pin61(Y in).
(2) Measure the peak point frequency “FVSM” at pin18(VSM
OUT) by using a spectrum analyzer.
(1) Input 100mV(p-p) FVSM sine wave signal (see Y9) to
pin61(Y in).
(2) Set VSM Gain (0/1/2/3) and measure the amplitude at
pin18(VM OUT),that is “VVM0 “/ “VVM-3 “/ “VVM-10 “/
“VVM-OFF“.
(3) Calculate,
G
VSM 0
=20*log(V
VM0
/0.1)
G
VSM-3
=20*log(V
VM-3
/0.1)
G
VSM-10
=20*log(V
VM-10
/0.1)
G
VSMOFF
=20*log(V
VM-off
/0.1)
Y10
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PDF描述 |
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| TB1262F | TOSHIBA BiCMOS INTEGRATED CIRCUIT, SILICON MONOLITHIC |
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| TB10.0 | Beldsol Magnet Wire, Approx. Spool Length: 6400'; Conductor Size AWG:36; No. Strands x Strand Size:Solid; Approval Categories:J-W-1177/9; MW 28-C (Single); Conductor Material:Copper RoHS Compliant: Yes |
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| TB1262F | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA BiCMOS INTEGRATED CIRCUIT, SILICON MONOLITHIC |
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| TB12C6CM | 制造商:STMicroelectronics 功能描述:TB12C6CM - Rail/Tube |
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