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參數(shù)資料
| 型號： | STV160NF02LA |
| 英文描述： | N-CHANNEL 20V 0.0018 OHM 160A POWERSO-10 STRIPFET POWER MOSFET |
| 中文描述： | N溝道20V的0.0018歐姆160A章POWERSO - 10 STRIPFET功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 529K |
| 代理商： | STV160NF02LA |
STV160NF02LA
2/8
THERMAL DATA
Rthj-case
Rthj-amb
T
l
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.71
50
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
20
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
10
μA
V
GS
= ± 15 V
±100
nA
Parameter
Test Conditions
V
DS
= V
, I
D
= 250μA
V
GS
= 10 V, I
D
= 80 A
V
GS
= 10 V, I
D
= 45 A
V
GS
= 8 V, I
D
= 80 A
V
GS
= 5 V, I
D
= 40 A
V
GS
= 10 V, I
D
=80 A;T
j
= 175 °C
V
GS
= 8 V, I
D
=80 A; T
j
= 175 °C
V
GS
= 5 V, I
D
=40 A; T
j
= 125 °C
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
1
V
Static Drain-source On
Resistance
1.8
1.76
1.9
3.8
2.7
2.7
3.7
6.4
6
8
14
m
m
m
m
m
m
m
I
D(on)
On State Drain Current
160
A
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 80A
V
DS
= 0 V, f = 1 MHz, V
GS
= 0
V
DS
= 15 V, f = 1 MHz, V
GS
= 0
Min.
Typ.
210
Max.
Unit
S
Forward Transconductance
R
g
C
iss
C
oss
C
rss
Gate resistance
1.1
pF
pF
pF
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Internal Source Inductance
5500
3210
750
C
iss
C
oss
C
rss
V
DS
= 0 V, f = 1 MHz, V
GS
= 0
8400
14500
5800
pF
pF
pF
L
S
From the Lead End (6mm from
Package Body) to the Die
Center
3
nH
L
D
Internal Drain Inductance
Not Available on Surface Mounting
Package
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STV160NF02LAT4 | 功能描述:MOSFET N-Ch 20 Volt 160 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STV160NF02LT4 | 功能描述:MOSFET N-Ch 20 Volt 160 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STV160NF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 30V - 0.0019ohm - 160A PowerSO-10 STripFET MOSFET |
| STV160NF03L_02 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.0019OHM - 160A PowerSO-10 STripFET TM POWER MOSFET |
| STV160NF03LA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.0021OHM - 160A PowerSO-10 STripFET TM POWER MOSFET |
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