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參數(shù)資料
| 型號(hào)： | STV160NF02LA |
| 英文描述： | N-CHANNEL 20V 0.0018 OHM 160A POWERSO-10 STRIPFET POWER MOSFET |
| 中文描述： | N溝道20V的0.0018歐姆160A章POWERSO - 10 STRIPFET功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 529K |
| 代理商： | STV160NF02LA |
1/8
December 2000
STV160NF02LA
N-CHANNEL 20V - 0.0018
- 160A PowerSO-10
STripFET POWER MOSFET
(1) V
DD
= 35V, I
D
= 45A, R
G
= 22
,
L = 330
μ
H, Starting T
j
=25
°C
(**)Limited only maximum junction temperature allowed by
PowerSO-10
I
TYPICAL R
DS
(on) = 0.0018
I
LOW THRESHOLD DRIVE
I
ULTRA LOW ON-RESISTANCE
I
ULTRA FAST SWITCHING
I
100% AVALANCHE TESTED
I
VERY LOW GATE CHARGE
I
LOW PROFILE, VERY LOW PARASITIC
INDUCTANCE PowerSO-10 PACKAGE
DESCRIPTION
The
STV160NF02LA
represents the second gen-
eration of Application Specific STMicroelectronics
well established STripFET process based on a
very unique strip layout design. The resulting
MOSFET shows unrivalled high packing density
with ultra low on-resistance and superior switching
charactestics. Process simplification also trans-
lates into improved manufacturing reproducibility.
This device is particularly suitable for high current,
low voltage switching application where efficiency
is crucial
APPLICATIONS
I
BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs DC-
DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(**)
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS
(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
Note: Marking will be STV160NF02AL
TYPE
V
DSS
R
DS(on)
I
D
STV160NF02LA
20 V
< 0.0027
160 A
Parameter
Value
Unit
20
V
20
V
± 15
V
160
A
113
A
640
A
210
W
1.4
W/°C
330
mJ
–65 to 175
°C
175
°C
PowerSO-10
1
10
INTERNAL SCHEMATIC DIAGRAM
CONNECTION DIAGRAM (TOP VIEW)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STV160NF02LAT4 | 功能描述:MOSFET N-Ch 20 Volt 160 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STV160NF02LT4 | 功能描述:MOSFET N-Ch 20 Volt 160 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STV160NF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 30V - 0.0019ohm - 160A PowerSO-10 STripFET MOSFET |
| STV160NF03L_02 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.0019OHM - 160A PowerSO-10 STripFET TM POWER MOSFET |
| STV160NF03LA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.0021OHM - 160A PowerSO-10 STripFET TM POWER MOSFET |
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