參數(shù)資料
型號(hào): STP40N03L-20
廠商: 意法半導(dǎo)體
英文描述: N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N溝道增強(qiáng)模式高密度功率MOS晶體管)
中文描述: N溝道增強(qiáng)模式“超高密度”功率MOS晶體管(不適用溝道增強(qiáng)模式高密度功率馬鞍山晶體管)
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 65K
代理商: STP40N03L-20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
Turn-on T ime
Rise Time
VDD =15 V
ID =10 A
RG =4.7
VGS =5 V
(see t est circuit, figure 3)
20
80
30
100
ns
(di/ dt)on
Turn-on Current Slope
VDD =24 V
ID =20 A
RG =50
VGS =5 V
(see t est circuit, figure 5)
200
A/
s
Qg
Qgs
Qgd
Total Gat e Charge
Gate-Source Charge
Gate-Drain Charge
VDD =24 V
ID =20 A
VGS =5 V
40
10
20
60
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall T ime
Cross-over T ime
VDD =24 V
ID =20 A
RG =4.7
VGS =5 V
(see t est circuit, figure 5)
42
45
76
55
60
100
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ISD
ISDM (
)
Source-drain Current
(pulsed)
40
160
A
VSD (
)Forward On Voltage
ISD =40 A
VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 20 A
di/ dt = 100 A/
s
VDD =24 V
Tj = 150
oC
(see t est circuit, figure 5)
65
0. 12
4
ns
C
A
(
) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
(1)ISD
≤ 40 A, di/dt ≤ 300 A/s, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
STP40N03L-20
3/7
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