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參數(shù)資料
| 型號(hào)： | STN4NE03 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 30V - 0.045ohm - 4A - SOT-223 STripFET POWER MOSFET |
| 中文描述： | ? -通道30V的- 0.045ohm - 4A條-采用SOT - 223 STripFET功率MOSFET |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | STN4NE03 |
THERMAL DATA
R
thj-pcb
R
thj-amb
T
l
Thermal Resistance Junction-PC Board
Thermal Resistance Junction-ambient
(Surface Mounted)
Maximum Lead Temperature For Soldering Purpose
Max
Max
50
60
260
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 25 V)
4
A
E
AS
20
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A
V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
o
C
V
GS
=
±
20 V
T
c
= 125
1
10
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current
V
DS
= V
GS
I
D
= 250
μ
A
2
3
4
V
R
DS(on)
V
GS
= 10 V
I
D
= 2 A
0.045
0.06
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
4
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 2 A
1
3.0
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0 V
760
150
50
1000
200
80
pF
pF
pF
STN4NE03
2/8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STN4NE03L | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL 30V - 0.037ohm - 4A - SOT-223 STripFET POWER MOSFET |
| STN4NE03L-ST | 制造商: 功能描述: 制造商:undefined 功能描述: |
| STN4NF03 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 30V - 0.039ohm - 6.5A SOT-223 STripFET⑩ II POWER MOSFET |
| STN4NF03L | 功能描述:MOSFET N-Ch 30 Volt 6.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN4NF03L_06 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 30V - 0.039ohm - 6.5A - SOT-223 STripFET II Power MOSFET |
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