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參數(shù)資料
| 型號(hào)： | STP3NA80FI |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -快速通道增強(qiáng)型功率MOS器件 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 200K |
| 代理商： | STP3NA80FI |
STP3NA80
STP3NA80FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 3.5
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW INTRINSIC CAPACITANCES
I
GATE GHARGE MINIMIZED
I
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized
cell
layout
proprietary edge termination concur to give the
device low R
DS(on)
and gate charge, unequalled
ruggedness and superior switching performance.
coupled
with
a
new
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWERSUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 4.5
< 4.5
I
D
STP3NA80
STP3NA80FI
800 V
800 V
3.1 A
2 A
1
2
3
TO-220
ISOWATT220
November 1993
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP3NA80
STP5NA80FI
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
800
V
V
DGR
800
V
V
GS
±
30
V
I
D
3.1
2
A
I
D
2
1.3
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
12.5
12.5
A
100
40
W
Derating Factor
1.25
0.32
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
150
1
2
3
1/10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP3NA90 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP3NA90FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP3NB100 | 功能描述:MOSFET N-Ch 1000 Volt 3 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP3NB100FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 1000V - 5.3 ohm - 3 A - TO-220/TO-220FP PowerMESH MOSFET |
| STP3NB60 | 功能描述:MOSFET RO 512-FQP3N60 3/05 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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