參數(shù)資料
型號(hào): STM8L162R8T3
廠商: STMICROELECTRONICS
元件分類: 微控制器/微處理器
英文描述: 8-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PQFP64
封裝: 10 X 10 MM, LQFP-64
文件頁數(shù): 101/116頁
文件大?。?/td> 1229K
代理商: STM8L162R8T3
STM8L162R8, STM8L162M8
Electrical parameters
Doc ID 17959 Rev 1
9.3.5
Memory characteristics
TA = -40 to 125 °C unless otherwise specified.
Table 34.
RAM and hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode (1)
1.
Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
Flash memory
Halt mode (or Reset)
1.4
V
Table 35.
Flash program and data EEPROM memory
Symbol
Parameter
Conditions
Min
Typ
Max
(1)
Unit
VDD
Operating voltage
(all modes, read/write/erase)
fSYSCLK = 16 MHz
1.65
3.6
V
tprog
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
6ms
Programming time for 1 to 128 bytes (block)
write cycles (on erased byte)
3ms
Iprog
Programming/ erasing consumption
TA=+25 °C, VDD = 3.0 V
0.7
mA
TA=+25 °C, VDD = 1.8 V
tRET
Data retention (program memory) after 10000
erase/write cycles at TA=+85 °C
TRET=+55 °C
years
Data retention (data memory) after 10000
erase/write cycles at TA=+85 °C
TRET=+55 °C
Data retention (data memory) after 10000
erase/write cycles at TA=+85 °C
TRET=+85 °C
NRW
Erase/write cycles (program memory)
See notes (1)(2)
kcycles
Erase/write cycles (data memory)
See notes (1)(3)
(4)
1.
Data based on characterization results, not tested in production.
2.
Retention guaranteed after cycling is 10 years @ 55 °C.
3.
Retention guaranteed after cycling is 1 year @ 55 °C.
4.
Data based on characterization performed on the whole data memory.
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