參數(shù)資料
型號(hào): STM32F101R6T6
廠商: STMICROELECTRONICS
元件分類: 微控制器/微處理器
英文描述: 32-BIT, FLASH, 36 MHz, RISC MICROCONTROLLER, PQFP64
封裝: 10 X 10 MM, 0.50 MM PITCH, LQFP-64
文件頁數(shù): 43/72頁
文件大小: 996K
代理商: STM32F101R6T6
Electrical characteristics
STM32F101xx
Figure 19.
Unused I/O pin connection
Output driving current
The GPIOs (general purpose input/outputs) can sink or source up to +/-8 mA, and sink
+20 mA (with a relaxed VOL).
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 5.2:
The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
IVDD (see Table 5).
The sum of the currents sunk by all the I/Os on VSS plus the maximum Run
consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating
IVSS (see Table 5).
RPD
Weak pull-down equivalent
resistor(6)
VIN = VDD
30
40
50
k
CIO
I/O pin capacitance
5
pF
1.
Values based on characterization results, and not tested in production.
2.
FT = Five-volt tolerant.
3.
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
4.
With a minimum of 100 mV.
5.
Leakage could be higher than max. if negative current is injected on adjacent pins.
6.
Pull-up and pull-down resistors are designed with a true resistance in series with a switchable
PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimum (~10% order)
.
Table 33.
I/O static characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ai14130
10 k
10 k
UNU SED I/O PORT
STM32F101
VDD
UNU SED I/O PORT
STM32F101
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