參數(shù)資料
型號: STM32F101R6T6
廠商: STMICROELECTRONICS
元件分類: 微控制器/微處理器
英文描述: 32-BIT, FLASH, 36 MHz, RISC MICROCONTROLLER, PQFP64
封裝: 10 X 10 MM, 0.50 MM PITCH, LQFP-64
文件頁數(shù): 21/72頁
文件大小: 996K
代理商: STM32F101R6T6
Electrical characteristics
STM32F101xx
5.3.3
Embedded reset and power control block characteristics
The parameters given in Table 9 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 7.
.
5.3.4
Embedded reference voltage
The parameters given in Table 10 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 7.
Table 9.
Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ Max
Unit
VPVD
Programmable voltage
detector level selection
PLS[2:0]=000 (rising edge)
2.1
2.18 2.26
V
PLS[2:0]=000 (falling edge)
2
2.08 2.16
V
PLS[2:0]=001 (rising edge)
2.19 2.28 2.37
V
PLS[2:0]=001 (falling edge)
2.09 2.18 2.27
V
PLS[2:0]=010 (rising edge)
2.28 2.38 2.48
V
PLS[2:0]=010 (falling edge)
2.18 2.28 2.38
V
PLS[2:0]=011 (rising edge)
2.38 2.48 2.58
V
PLS[2:0]=011 (falling edge)
2.28 2.38 2.48
V
PLS[2:0]=100 (rising edge)
2.47 2.58 2.69
V
PLS[2:0]=100 (falling edge)
2.37 2.48 2.59
V
PLS[2:0]=101 (rising edge)
2.57 2.68 2.79
V
PLS[2:0]=101 (falling edge)
2.47 2.58 2.69
V
PLS[2:0]=110 (rising edge)
2.66 2.78
2.9
V
PLS[2:0]=110 (falling edge)
2.56 2.68
2.8
V
PLS[2:0]=111 (rising edge)
2.76 2.88
3
V
PLS[2:0]=111 (falling edge)
2.66 2.78
2.9
V
VPVDhyst
PVD hysteresis
100
mV
VPOR/PDR
Power on/power down
reset threshold
Falling edge
1.8
1.88 1.96
V
Rising edge
1.84 1.92
2.0
V
VPDRhyst
PDR hysteresis
40
mV
tRSTTEMPO
(1)
1.
Guaranteed by design, not tested in production.
Reset temporization
1.5
2.5
3.5
ms
Table 10.
Embedded internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
–40 °C < TA < +85 °C 1.16
1.20
1.24
V
TS_vrefint
(1)
1.
Shortest sampling time can be determined in the application by multiple iterations.
ADC sampling time when reading
the internal reference voltage
5.1
17.1
s
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