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參數(shù)資料
| 型號： | STM32F101C8T6 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 32-BIT, FLASH, 36 MHz, RISC MICROCONTROLLER, PQFP48 |
| 封裝： | 7 X 7 MM, 0.50 MM PITCH, LQFP-48 |
| 文件頁數(shù)： | 41/72頁 |
| 文件大小： | 996K |
| 代理商： | STM32F101C8T6 |
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Electrical characteristics
STM32F101xx
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second. To complete these trials, ESD stress can be applied directly on the device, over the
range of specification values. When unexpected behavior is detected, the software can be
hardened to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device is monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with SAE J
1752/3 standard which specifies the test board and the pin loading.
5.3.11
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size is
either 3 parts (cumulative mode) or 3 parts × (n + 1) supply pins (non-cumulative mode).
The human body model (HBM) can be simulated. The tests are compliant with JESD22-
A114A standard.
For more details, refer to the application note AN1181.
Table 30.
EMI characteristics(1)
1.
TBD stands for to be determined.
Symbol Parameter
Conditions
Monitored
frequency band
Max vs.
[fHSE/fHCLK]
Unit
8/36 MHz
SEMI
Peak level
VDD = 3.3 V, TA = 2 5°C,
LQFP100 package compliant
with SAE J 1752/3
0.1 MHz to 30 MHz
7
dBV
30 MHz to 130 MHz
8
130 MHz to 1GHz
13
SAE EMI Level
3.5
-
Table 31.
ESD absolute maximum ratings(1)
1.
TBD stands for to be determined.
Symbol
Ratings
Conditions
Maximum value(2)
2.
Values based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage (human
body model)
TA = +25 °C
2000
V
VESD(CDM)
Electrostatic discharge voltage (charge
device model)
500
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相關(guān)代理商/技術(shù)參數(shù) |
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| STM32F101C8T6TR | 功能描述:ARM微控制器 - MCU 32BIT Cortex M3 M/D Access Line RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT |
| STM32F101C8T6XXX | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces |
| STM32F101C8U6 | 功能描述:ARM微控制器 - MCU 32-Bit Cortex 64Kb Access Line MCU RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT |
| STM32F101C8U6TR | 功能描述:ARM微控制器 - MCU MED-DENSTY ACCESS LN ARM-BASED 32-BIT MCU RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT |
| STM32F101C8U6XXX | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces |
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