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參數(shù)資料
| 型號(hào)： | STH9NA80FI |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -頻道800V的- 0.85ohm - 9.1A - TO-247/ISOWATT218快速功率MOS器件 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | STH9NA80FI |
THERMAL DATA
TO-247
ISOWATT218
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Max
0.65
1.56
o
C/W
o
C/W
o
C/W
o
C
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Typ
30
0.1
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
9.1
A
E
AS
415
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwisespecified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
800
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 100
o
C
50
500
±
100
μ
A
μ
A
nA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
I
D
= 250
μ
A
2.25
3
3.75
V
R
DS(on)
V
GS
= 10V
I
D
= 4.5 A
0.85
1
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
9.1
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 4.5A
7.5
10
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
2900
290
80
3800
380
105
pF
pF
pF
STW9NA80-STH9NA80FI
2/10
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