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參數(shù)資料
| 型號： | STH9NA80FI |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -頻道800V的- 0.85ohm - 9.1A - TO-247/ISOWATT218快速功率MOS器件 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 132K |
| 代理商： | STH9NA80FI |
STW9NA80
STH9NA80FI
N - CHANNEL 800V - 0.85
- 9.1A - TO-247/ISOWATT218
FAST POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 0.85
I
±
30V GATE TO SOURCE VOLTAGERATING
I
100%AVALANCHE TESTED
I
REPETITIVEAVALANCHE DATA AT 100
o
C
I
LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
I
REDUCED THRESHOLD VOLTAGESPREAD
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STW9NA80
STH9NA80FI
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
800
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
800
V
V
GS
±
30
V
I
D
I
D
9.1
5.9
A
6
3.9
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
36.4
36.4
A
190
80
W
1.52
0.64
W/
o
C
V
ISO
T
stg
T
j
Insulation Withstand Voltage (DC)
4000
V
Storage Temperature
-65 to 150
o
C
o
C
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
TYPE
V
DSS
R
DS(on)
< 1.0
< 1.0
I
D
STW9NA80
STH9NA80FI
800 V
800 V
9.1 A
5.9 A
November 1998
1
2
3
TO-247
ISOWATT218
1
2
3
1/10
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
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| STHDLS101TQTR | 功能描述:接口 - 專用 AC coupled HDMI level shifter RoHS:否 制造商:Texas Instruments 產(chǎn)品類型:1080p60 Image Sensor Receiver 工作電源電壓:1.8 V 電源電流:89 mA 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:BGA-59 |
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