參數(shù)資料
型號(hào): STGP14NC60KD
廠商: 意法半導(dǎo)體
英文描述: Suppressors, Outlet; Suppressor Type:Outlet Strip; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No
中文描述: N溝道第14A - 600V的- TO-220/TO-220FP/D2PAK短路IGBT的額定PowerMESH
文件頁(yè)數(shù): 3/14頁(yè)
文件大?。?/td> 456K
代理商: STGP14NC60KD
3/14
STGP14NC60KD - STGF14NC60KD - STGB14NC60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
Parameter
g
fs
(1)
Forward Transconductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer
Capacitance
Q
g
Q
ge
Q
gc
Gate-Collector Charge
t
scw
Short Circuit Withstand Time
Table 7: Switching On
Symbol
t
d(on)
t
r
(di/dt)
on
t
d(on)
t
r
(di/dt)
on
Table 8: Switching Off
Symbol
t
r
(V
off
)
t
d
(
off
)
t
f
Table 9: Switching Energy
Symbol
Eon
(2)
E
off
(3)
E
ts
Total Switching Losses
Eon
(2)
E
off
(3)
E
ts
Total Switching Losses
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5%
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
(3)Turn-off losses include also the tail of the collector current.
Test Conditions
V
CE
= 15 V
,
I
C
= 7 A
V
CE
= 25 V, f= 1 MHz, V
GE
= 0
Min.
Typ.
3
Max.
Unit
S
760
pF
86
pF
15.5
pF
Total Gate Charge
Gate-Emitter Charge
V
CE
= 390 V, I
C
= 7 A,
V
GE
= 15 V
(see Figure 21)
34.4
8.1
16.4
nC
nC
nC
V
CE
= 0.5 V
BR(CES)
,T
j
= 125°C,
R
G
= 10
Ω,
V
GE
= 12 V
10
μs
Parameter
Test Conditions
V
CC
= 390 V, I
C
= 7 A
R
G
= 10
Ω
, V
GE
= 15V, Tj= 25°C
(see Figure 19)
Min.
Typ.
Max.
Unit
ns
ns
A/μs
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
22.5
8.5
700
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
CC
= 390 V, I
C
= 7 A
R
G
= 10
Ω
, V
GE
= 15V, Tj= 125°C
(see Figure 19)
22
9.5
680
ns
ns
A/μs
Parameter
Test Conditions
V
cc
= 390 V, I
C
= 7 A,
R
GE
= 10
Ω
, V
GE
= 15 V
T
J
= 25 °C
(see Figure 19)
V
cc
= 390 V, I
C
= 7 A,
R
GE
= 10
Ω
, V
GE
= 15 V
Tj = 125 °C
(see Figure 19)
Min.
Typ.
60
116
75
Max.
Unit
ns
ns
ns
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
t
r
(V
off
)
t
d
(
off
)
t
f
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
24
196
144
ns
ns
ns
Parameter
Test Conditions
V
CC
= 390 V, I
C
= 7 A
R
G
= 10
Ω
, V
GE
= 15V, Tj= 25°C
(see Figure 19)
Min.
Typ.
82
155
237
Max.
Unit
μJ
μJ
μJ
Turn-on Switching Losses
Turn-off Switching Losses
Turn-on Switching Losses
Turn-off Switching Losses
V
CC
= 390 V, I
C
= 7 A
R
G
= 10
Ω
, V
GE
= 15V, Tj= 125°C
(see Figure 19)
131
370
501
μJ
μJ
μJ
相關(guān)PDF資料
PDF描述
STGP7NB60FD N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH? IGBT
STGP7NB60HD N-CHANNEL 7A - 600V TO-220/FP PowerMESH IGBT
STGP7NB60KD N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK PowerMESH⑩ IGBT
STGW12NB60HD N-CHANNEL 12A - 600V TO-247 PowerMESH IGBT
STGW12NB60H N-CHANNEL 12A - 600V TO-247 PowerMESH IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGP15H60DF 制造商:STMicroelectronics 功能描述:Trench gate field-stop IGBT, H series 600 V, 15 A high speed
STGP15M65DF2 功能描述:TRENCH GATE FIELD-STOP IGBT M SE 制造商:stmicroelectronics 系列:- 包裝:管件 零件狀態(tài):有效 IGBT 類型:溝槽型場(chǎng)截止 電壓 - 集射極擊穿(最大值):650V 電流 - 集電極(Ic)(最大值):30A 脈沖電流 - 集電極 (Icm):60A 不同?Vge,Ic 時(shí)的?Vce(on):2V @ 15V,15A 功率 - 最大值:136W 開關(guān)能量:90μJ(開),450μJ(關(guān)) 輸入類型:標(biāo)準(zhǔn) 柵極電荷:45nC 25°C 時(shí) Td(開/關(guān))值:24ns/93ns 測(cè)試條件:400V,15A,12 歐姆,15V 反向恢復(fù)時(shí)間(trr):142ns 封裝/外殼:TO-220-3 安裝類型:通孔 供應(yīng)商器件封裝:TO-220 標(biāo)準(zhǔn)包裝:50
STGP18N40LZ 功能描述:IGBT 晶體管 400V INTRN CLMP IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGP19NC60H 功能描述:IGBT 晶體管 19 A - 600 V very fast IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGP19NC60HD 功能描述:IGBT 晶體管 19 A - 600 V very fast IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube