參數(shù)資料
型號： STGD3NB60M
英文描述： 58V SURGECTOR, DO-214AA
中文描述： N溝道600V的IGBT的第3A TO-220/DPAK POWERMESH
文件頁數(shù)： 2/10頁
文件大?。?/td> 502K
代理商： STGD3NB60M
STGD3NB60HD
2/10
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
V
ECR
Emitter-Collector Voltage
V
GE
Gate-Emitter Voltage
I
C
Collector Current (continuous) at T
C
= 25°C
I
C
Collector Current (continuous) at T
C
= 100°C
I
CM
( )
Collector Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
T
stg
Storage Temperature
T
j
Operating Junction Temperature
( )
Pulse width limited by safe operating area
THERMAL DATA
Rthj-case
Rthj-amb
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 125 °C
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
ON (1)
Symbol
V
GE(th)
V
CE(sat)
Parameter
Value
Unit
600
V
20
V
± 20
V
10
A
6
A
24
A
50
W
0.4
W/°C
–55 to 150
°C
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.5
100
°C/W
°C/W
Test Conditions
I
C
= 250 μA, V
GE
= 0
Min.
600
Typ.
Max.
Unit
V
V
CE
= Max Rating, T
C
= 25 °C
50
μA
100
μA
V
GE
= ±20V , V
CE
= 0
±100
nA
Parameter
Test Conditions
V
CE
= V
GE
, I
C
= 250μA
V
GE
= 15V, I
C
= 3 A
V
GE
= 15V, I
C
= 3 A, Tj =125°C
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
5
V
Collector-Emitter Saturation
Voltage
2.4
2.8
V
1.9
V
相關(guān)PDF資料
PDF描述
STGD3NB60MT4 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:100pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
STGP3NB60M N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT
STGP10N50A Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:DO-214AA; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:65V; Capacitance:70pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA
STH221 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:170V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
STH26N25 TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 26A I(D) | TO-218
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGD3NB60MT4 功能描述:IGBT 晶體管 N-Ch 600 Volt 3 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGD3NB60S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH⑩ IGBT
STGD3NB60SD 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT
STGD3NB60SD_04 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT
STGD3NB60SD-1 功能描述:IGBT 晶體管 N Ch 3A 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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