參數(shù)資料
型號: STE38N60
英文描述: Diac Thyristor; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Package/Case:Axial Leaded; Peak Surge Current:2A; Breakover Voltage Min:56V RoHS Compliant: Yes
中文描述: 晶體管| MOSFET功率模塊|獨立| 600V的五(巴西)直| 38A條(?。?/td>
文件頁數(shù): 2/6頁
文件大?。?/td> 266K
代理商: STE38N60
相關(guān)PDF資料
PDF描述
STE45N50 TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 45A I(D)
STE47N50 TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 47A I(D)
STF4045AF TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 36A I(C)
STF4045AV Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:5mA; Current, It av:6A; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes
STF4045DF Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:5mA; Current, It av:6A; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STE38NB50 功能描述:MOSFET N-Ch 500 Volt 38 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STE38NB50F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 500V - 0.11 ohm - 38A - ISOTOP PowerMESH MOSFET
STE400 制造商:Thomas & Betts 功能描述:Fittings Connector 4inch Male Aluminum
STE4000-25T4MI 功能描述:鉭質(zhì)電容器-濕式 RoHS:否 制造商:Vishay/Tansitor 電容:2800 uF 電壓額定值:35 V ESR:0.35 Ohms 容差:20 % 端接類型:Axial 工作溫度范圍:- 55 C to + 85 C 制造商庫存號:T4 Case 外殼直徑:9.52 mm 外殼長度:26.97 mm 外殼寬度: 外殼高度: 系列:STE 產(chǎn)品:Tantalum Wet Hermetically Sealed 封裝:Bulk
STE400-100T4KI 制造商:Vishay Sprague 功能描述:SUPER-TAN LW ESR 400UF 100VDC 10% INSULATED - Bulk