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| 型號： | STD9NM60T4 |
| 英文描述： | SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On State RMS Current, IT(rms):800mA; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:200uA RoHS Compliant: Yes |
| 中文描述： | N溝道600V的0.55歐姆8.3A TO-220/DPAK/IPAK穩(wěn)壓保護MDMesh功率MOSFET |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 337K |
| 代理商： | STD9NM60T4 |
STP9NM60 / STD9NM60 / STD9NM60-1
2/9
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate-source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
j
T
stg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) I
SD
≤
7A, di/dt
≤
400
μ
A, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
600
V
600
V
± 30
V
8.3
A
5.2
A
33.2
A
100
W
0.8
15
W/°C
V/ns
Operating Junction Temperature
-65 to 150
°C
TO-220
DPAK
IPAK
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.25
°C/W
°C/W
°C
62.5
100
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
3.5
Unit
A
TBD
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP9N30 | TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 9A I(D) | TO-220AB |
| STP9NM60 | N-CHANNEL 600V 0.55 OHM 8.3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET |
| STDELIV | Resettable Fuse; Operating Voltage Max:30V; Resistance:0.05ohm; Holding Current:4A; Tripping Current:8A; Initial Resistance Min:0.01ohm; Mounting Type:Through Hole; Terminal Type:Radial Leaded; Thermistor Tolerance:+/- 5% |
| STDL130 | STDL130|Data Sheet |
| STDL131 | STDL131|Data Sheet |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD9OE-3 | 制造商:TE Connectivity 功能描述:718986-000 |
| ST-DA3 | 制造商:Radio Design Labs 功能描述:RDL Distribution Amplifier 制造商:RADIO DESIGN LABS 功能描述:RDL AUDIO DISTRIBUTION AMPLIFIER, POWER REQUIREMENTS: 24-30 VDC FLOATING OR 12-15 VDC BIPOLAR SUPPLY, 50 MA, APPLICATIONS: DISTRIBUTION WITH UP TO 3 OUTPUTS, BRIDGING A LINE FOR LOCAL DISTRIBUTION, DISTRIBUTION WITH IMPEDANCE CONVERS |
| STD-C | 功能描述:電線鑒定 COLORED MARKING TAPE RoHS:否 制造商:TE Connectivity / Q-Cees 產(chǎn)品:Labels and Signs 類型: 材料:Vinyl 顏色:Blue 寬度:0.625 in 長度:1 in |
| STDC-002 | 功能描述:去焊 Desolder Cartridge ID=0.64mm(0.025") RoHS:否 制造商:Chip Quik 產(chǎn)品:Desoldering Tools 類型: |
| STDC-003 | 功能描述:去焊 Desolder Cartridge ID=0.76mm(0.03") RoHS:否 制造商:Chip Quik 產(chǎn)品:Desoldering Tools 類型: |
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