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參數(shù)資料
| 型號： | STD9NM60 |
| 元件分類： | 熱敏電阻 |
| 英文描述： | Resettable Fuse; Series:2920L; Thermistor Type:PTC; Operating Voltage Max:15VDC; Holding Current:2A; Tripping Current:4A; External Depth:1.25mm; Length:7.98mm; Initial Resistance Min:0.05ohm; Initial Resistance Max:0.125ohm RoHS Compliant: Yes |
| 中文描述： | N溝道600V的0.55歐姆8.3A TO-220/DPAK/IPAK穩(wěn)壓保護(hù)MDMesh功率MOSFET |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 337K |
| 代理商： | STD9NM60 |
STP9NM60 / STD9NM60 / STD9NM60-1
2/9
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate-source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
j
T
stg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) I
SD
≤
7A, di/dt
≤
400
μ
A, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
600
V
600
V
± 30
V
8.3
A
5.2
A
33.2
A
100
W
0.8
15
W/°C
V/ns
Operating Junction Temperature
-65 to 150
°C
TO-220
DPAK
IPAK
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.25
°C/W
°C/W
°C
62.5
100
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
3.5
Unit
A
TBD
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD9NM60-1 | Resettable Fuse; Series:2920L; Thermistor Type:PTC; Operating Voltage Max:15VDC; Holding Current:2.5A; Tripping Current:5A; External Depth:1.25mm; Length:7.98mm; Initial Resistance Min:0.035ohm; Initial Resistance Max:0.085ohm RoHS Compliant: Yes |
| STD9NM60T4 | SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On State RMS Current, IT(rms):800mA; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:200uA RoHS Compliant: Yes |
| STP9N30 | TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 9A I(D) | TO-220AB |
| STP9NM60 | N-CHANNEL 600V 0.55 OHM 8.3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET |
| STDELIV | Resettable Fuse; Operating Voltage Max:30V; Resistance:0.05ohm; Holding Current:4A; Tripping Current:8A; Initial Resistance Min:0.01ohm; Mounting Type:Through Hole; Terminal Type:Radial Leaded; Thermistor Tolerance:+/- 5% |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD9NM60-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 0.55 OHM 8.3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET |
| STD9NM60N | 功能描述:MOSFET N-Ch 600V 0.63 6.5A MDmesh II Power MO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD9NM60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 0.55 OHM 8.3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET |
| STD9OE-3 | 制造商:TE Connectivity 功能描述:718986-000 |
| ST-DA3 | 制造商:Radio Design Labs 功能描述:RDL Distribution Amplifier 制造商:RADIO DESIGN LABS 功能描述:RDL AUDIO DISTRIBUTION AMPLIFIER, POWER REQUIREMENTS: 24-30 VDC FLOATING OR 12-15 VDC BIPOLAR SUPPLY, 50 MA, APPLICATIONS: DISTRIBUTION WITH UP TO 3 OUTPUTS, BRIDGING A LINE FOR LOCAL DISTRIBUTION, DISTRIBUTION WITH IMPEDANCE CONVERS |
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