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參數(shù)資料
| 型號(hào)： | STD9NM60-1 |
| 元件分類： | 熱敏電阻 |
| 英文描述： | Resettable Fuse; Series:2920L; Thermistor Type:PTC; Operating Voltage Max:15VDC; Holding Current:2.5A; Tripping Current:5A; External Depth:1.25mm; Length:7.98mm; Initial Resistance Min:0.035ohm; Initial Resistance Max:0.085ohm RoHS Compliant: Yes |
| 中文描述： | N溝道600V的0.55歐姆8.3A TO-220/DPAK/IPAK穩(wěn)壓保護(hù)MDMesh功率MOSFET |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 337K |
| 代理商： | STD9NM60-1 |
3/9
STP9NM60 / STD9NM60 / STD9NM60-1
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250μA
R
DS(on)
Static Drain-source On
Resistance
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
10
μA
μA
V
GS
= ± 20V
±5
μA
3
4
5
V
V
GS
= 10V, I
D
= 3.5 A
0.55
0.60
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 4.1 A
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
Min.
Typ.
TBD
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
580
160
20
pF
pF
pF
Parameter
Test Conditions
V
DD
= 300 V, I
D
= 4.1 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 480 V, I
D
= 8.3 A,
V
GS
= 10 V
Min.
Typ.
TBD
TBD
Max.
Unit
ns
ns
Turn-on Delay Time
Rise Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
22
TBD
TBD
30
nC
nC
nC
Parameter
Test Conditions
V
DD
= 480 V, I
D
= 8.3 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
Fall Time
Cross-over Time
TBD
TBD
TBD
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
TBD
TBD
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 8.3 A, V
GS
= 0
I
SD
= 8.3 A, di/dt = 100A/μs
V
DD
= 100 V, T
j
= 25°C
(see test circuit, Figure 5)
TBD
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
TBD
TBD
TBD
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 8.3 A, di/dt = 100A/μs
V
DD
= 100 V, T
j
= 150°C
(see test circuit, Figure 5)
TBD
TBD
TBD
ns
μC
A
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