參數(shù)資料
型號: STD9N10L-1
元件分類: 熱敏電阻
英文描述: Resettable Fuse; Series:2920L; Thermistor Type:PTC; Operating Voltage Max:33VDC; Holding Current:1.1A; Tripping Current:2.2A; External Depth:1mm; Length:7.98mm; Initial Resistance Min:0.12ohm; Initial Resistance Max:0.41ohm RoHS Compliant: Yes
中文描述: 晶體管| MOSFET的| N溝道| 100V的五(巴西)直| 9A條(?。﹟對251AA
文件頁數(shù): 6/6頁
文件大?。?/td> 77K
代理商: STD9N10L-1
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STD9N10L
6/6
相關(guān)PDF資料
PDF描述
STD9N10LT4 Resettable Fuse; Series:2920L; Thermistor Type:PTC; Operating Voltage Max:33VDC; Holding Current:1.5A; Tripping Current:3A; External Depth:1.25mm; Length:7.98mm; Initial Resistance Min:0.08ohm; Initial Resistance Max:0.23ohm RoHS Compliant: Yes
STD9NM60 Resettable Fuse; Series:2920L; Thermistor Type:PTC; Operating Voltage Max:15VDC; Holding Current:2A; Tripping Current:4A; External Depth:1.25mm; Length:7.98mm; Initial Resistance Min:0.05ohm; Initial Resistance Max:0.125ohm RoHS Compliant: Yes
STD9NM60-1 Resettable Fuse; Series:2920L; Thermistor Type:PTC; Operating Voltage Max:15VDC; Holding Current:2.5A; Tripping Current:5A; External Depth:1.25mm; Length:7.98mm; Initial Resistance Min:0.035ohm; Initial Resistance Max:0.085ohm RoHS Compliant: Yes
STD9NM60T4 SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On State RMS Current, IT(rms):800mA; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:200uA RoHS Compliant: Yes
STP9N30 TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 9A I(D) | TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STD9N10LT4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9A I(D) | TO-252AA
STD9N10T4 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR
STD9N40M2 功能描述:MOSFET N-CH 400V 6A DPAK 制造商:stmicroelectronics 系列:MDmesh? II Plus 包裝:剪切帶(CT) 零件狀態(tài):有效 FET 類型:MOSFET N 通道,金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓(Vdss):400V 電流 - 連續(xù)漏極(Id)(25°C 時):6A(Tc) 不同?Id,Vgs 時的?Rds On(最大值):800 毫歐 @ 3A,10V 不同 Id 時的 Vgs(th)(最大值):4V @ 250μA 不同 Vgs 時的柵極電荷(Qg):8.8nC @ 10V 不同 Vds 時的輸入電容(Ciss):270pF @ 100V 功率 - 最大值:60W 工作溫度:-55°C ~ 150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:TO-252-3,DPak(2 引線+接片),SC-63 供應(yīng)商器件封裝:DPAK 標(biāo)準(zhǔn)包裝:1
STD9N60M2 制造商:STMicroelectronics 功能描述:POWER MOSFET - Tape and Reel 制造商:STMicroelectronics 功能描述:MOSFET N-CH 600V 5.5A DPAK 制造商:STMicroelectronics 功能描述:Single N-Channel 650 V 0.78 Ohm 60 W Surface Mount Power Mosfet - DPAK-3 制造商:STMicroelectronics 功能描述:N-channel 600 V 0.78 Ohm 5.5 A MDmesh II Plus low Qg Power MOSFET DPAK 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 5.5A DPAK 制造商:STMicroelectronics 功能描述:N-channel 600 V 0.78 Ohm 5.5 A MDmesh II Plus Power Mosfet - DPAK 制造商:STMicroelectronics 功能描述:600V,0.72,5.5A,N-Channel Power MOSFET 制造商:STMicroelectronics 功能描述:N-channel 600V,0.72Ohm,5.5A Power MOSFET
STD9N65M2 功能描述:MOSFET N-CH 650V 5A DPAK 制造商:stmicroelectronics 系列:MDmesh?? 包裝:剪切帶(CT) 零件狀態(tài):有效 FET 類型:MOSFET N 通道,金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓(Vdss):650V 電流 - 連續(xù)漏極(Id)(25°C 時):5A(Tc) 不同?Id,Vgs 時的?Rds On(最大值):900 毫歐 @ 2.5A,10V 不同 Id 時的 Vgs(th)(最大值):4V @ 250μA 不同 Vgs 時的柵極電荷(Qg):10nC @ 10V 不同 Vds 時的輸入電容(Ciss):315pF @ 100V 功率 - 最大值:60W 工作溫度:150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:TO-252-3,DPak(2 引線+接片),SC-63 供應(yīng)商器件封裝:DPAK 標(biāo)準(zhǔn)包裝:1