- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄372309 > ST650C20L1 THYRISTOR 1557A PDF資料下載
參數(shù)資料
| 型號： | ST650C20L1 |
| 英文描述： | THYRISTOR 1557A |
| 中文描述： | 晶閘管1557A |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 96K |
| 代理商： | ST650C20L1 |
ST650C..L Series
3
Bulletin I25203 rev. B 04/00
www.irf.com
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20
, t
r
≤
1μs
T
J
= T
J
max, anode voltage
≤
80%
V
DRM
Gate current 1A, di
g
/dt = 1A/μs
V
d
= 0.67% V
DRM
,
T
J
= 25
°
C
I
TM
= 750A, T
J
= T
J
max, di/dt
= 60A/μs, V
R
= 50V
dv/dt
= 20V/μs, Gate 0V 100
,
t
p
= 500μs
Parameter
ST650C..L
Units Conditions
Switching
1000
A/μs
t
d
Typical delay time
1.0
t
q
Typical turn-off time
200
μs
dv/dt
Maximum critical rate of rise of
off-state voltage
I
DRM
I
RRM
Max. peak reverse and off-state
leakage current
Blocking
500
V/
μ
s
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST650C..L
Units Conditions
80
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
P
G(AV)
Maximum average gate power
I
GM
+V
GM
Maximum peak positive
gate voltage
Maximum peak gate power
10.0
T
J
= T
J
max, t
p
≤
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
2.0
Max. peak positive gate current
3.0
A
-V
GM
Maximum peak negative
gate voltage
T
J
= - 40
°
C
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= - 40
°
C
T
J
= 25
°
C
T
J
= 125
°
C
mA
V
I
GD
DC gate current not to trigger
10
mA
Parameter
ST650C..L
Units Conditions
20
5.0
Triggering
TYP.
MAX.
200
-
100
200
50
-
2.5
-
1.8
3.0
1.1
-
V
GD
DC gate voltage not to trigger
0.25
V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
T
J
= T
J
max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
V
GT
DC gate voltage required
to trigger
I
GT
DC gate current required
to trigger
W
V
T
J
= T
J
max, t
p
≤
5ms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ST650C22L1 | THYRISTOR 1557A |
| ST650C24L1 | THYRISTOR 1557A |
| ST662ABD-TR | DC to DC Converter |
| ST662ACD-TR | DC to DC Converter |
| ST662 | MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC; Leaded Process Compatible:No |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST650C22L1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR 1557A |
| ST650C24L0 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 790 A |
| ST650C24L0L | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 790 A |
| ST650C24L1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 790 A |
| ST650C24L1L | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 790 A |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。