參數(shù)資料
型號(hào): ST650C20L1
英文描述: THYRISTOR 1557A
中文描述: 晶閘管1557A
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 96K
代理商: ST650C20L1
ST650C..L Series
2
Bulletin I25203 rev. B 04/00
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
V
RSM
, maximum non-
repetitive peak voltage
V
I
DRM
/I
RRM
max.
@ T
J
= T
J
max
mA
20
2000
2100
ST650C..L
22
2200
2300
80
24
2400
2500
I
T(AV)
Max. average on-state current
790 (324)
A
180
°
conduction, half sine wave
@ Heatsink temperature
55 (85)
°
C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one-cycle
non-repetitive surge current
1857
DC @ 25
°
C heatsink temperature double side cooled
10100
t = 10ms
No voltage
10700
A
t = 8.3ms
reapplied
8600
t = 10ms
100% V
RRM
reapplied
9150
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
510
t = 10ms
No voltage
Initial T
J
= T
J
max.
475
t = 8.3ms
reapplied
370
t = 10ms
100% V
RRM
347
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
5100
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)
1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
I
H
I
L
Max. on-state voltage
2.07
V
I
pk
= 1700A, T
J
= T
J
max, t
p
= 10ms sine pulse
Maximum holding current
600
Typical latching current
1000
1.04
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
0.61
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
0.35
(I >
π
x I
T(AV)
),T
J
= T
J
max.
Parameter
ST650C..L
Units Conditions
1.13
(I >
π
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
V
m
mA
T
J
= 25
°
C, anode supply 12V resistive load
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