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參數(shù)資料
| 型號(hào)： | ST1900C48R0 |
| 英文描述： | 4800V 1625A Phase Control SCR in a A-36 (R-Puk) package |
| 中文描述： | 4800V 1625A可控硅相位控制在阿- 36（注冊(cè)商標(biāo)，北辰）封裝 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 70K |
| 代理商： | ST1900C48R0 |
ST1900C..R Series
2
Bulletin I25197 rev. B 02/00
www.irf.com
Voltage
Code
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
4500
4600
4800
5000
5200
V
RSM
, maximum non-
repetitive peak voltage
V
4600
4700
4900
5100
5300
I
DRM
/I
RRM
max.
@ T
C
= 125
°
C
mA
Type number
45
46
48
50
52
ELECTRICAL SPECIFICATIONS
Voltage Ratings
ST1900C..R
250
I
T(AV)
Max. average on-state current
1625 (1030)
A
@ Case temperature
80
°
C
I
T(AV)
Max. average on-state current
1940 (800)
A
@ Heatsink temperature
55 (85)
°
C
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one-cycle
non-repetitive surge current
3500
A
DC @ 25
°
C heatsink temperature double side cooled
No voltage
reapplied
50% V
RRM
reapplied
No voltage
reapplied
50% V
RRM
reapplied
Sinusoidal half wave,
Initial T
C
= 125
°
C
I
2
t
Maximum I
2
t for fusing
V
T(TO)
r
t
Max. value of threshold voltage
1.4
V
T
J
= T
J
max.
Max. value of on-state slope
resistance
V
TM
Max. on-state voltage
2.1
V
I
pk
= 2900A, T
C
= 25
°
C
I
L
Typical latching current
300
mA
T
J
= 25
°
C, V
D
=
5V
Parameter
ST1900C..R
Units
Conditions
On-state Conduction
A
KA
2
s
0.31
T
J
= T
J
max.
m
180
°
conduction, half sine wave
double side (single side [anode side]) cooled
Parameter
ST1900C..R
Units Conditions
Switching
di/dt
Max. repetitive 50Hz (no repetitive)
rate of rise of turned-on current
From 67% V
DRM
to 1000A gate drive 20V, 10
, t
r
=
0.5μs
to 1A, T
J
= T
J
max.
Gate drive 30V, 15
,
V
d
= 67% V
DRM
,
T
J
= 25
°
C
Rise time 0.5μs
I
T
= 1000A, t
p
= 1ms, T
J
= T
J
max, V
RM
= 50V,
dI
RR
/dt = 20A/μs, V
DR
=
67% V
DRM
,
dV
DR
/dt
= 8V/μs linear
150 (300)
A/μs
μs
t
q
Typical turn-off time
500
t
d
Maximum delay time
2.5
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
27500
29000
22000
23500
3780
3490
2420
2290
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