
SSH8N80A
N-CHANNEL POWER MOSFET
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise specified)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Notes:
x
y
z
{
|
Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
L=13mH, I
AS
=8A, V
DD
=50V, R
G
=27
, Starting T
J
=25
°
C
I
SD
≤
9A, di/dt
≤
180A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
=25
°
C
Pulse Test: Pulse Width
≤
250
μ
s, Duty Cycle
≤
2%
Essentially Independent of Operating Temperature
Symbol
Characteristics
Min.
Typ.
Max.
Units
Test Conditions
BV
DSS
BV/
T
J
V
GS(th)
Drain-Source Breakdown Voltage
800
V
V
GS
=0V, I
D
=250
μ
A
I
D
=250
μ
A,
See Fig 7
V
DS
=5V, I
D
=250
μ
A
V
GS
=30V
V
GS
=
30V
V
DS
=800V
V
DS
=640V, T
C
=125
°
C
Breakdown Voltage Temp. Coeff.
0.96
V/
°
C
Gate Threshold Voltage
2.0
3.5
V
I
GSS
Gate-Source Leakage, Forward
100
nA
Gate-Source Leakage, Reverse
100
I
DSS
Drain-to-Source Leakage Current
25
μ
A
250
R
DS(on)
Static Drain-Source
On-State Resistance
1.5
V
GS
=10V, I
D
=4A
{
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Forward Transconductance
6.56
S
V
DS
=50V, I
D
=4A
{
Input Capacitance
2020
2600
pF
V
GS
=0V, V
DS
=25V
f=1MHz
See Fig 5
Output Capacitance
195
230
Reverse Transfer Capacitance
82
95
Turn-On Delay Time
25
60
ns
V
DD
=400V, I
D
=9A
R
G
=10
See Fig 13
{ |
Rise Time
37
85
Turn-Off Delay Time
113
235
Fall Time
42
95
Total Gate Charge
93
120
nC
V
DS
=640V, V
GS
=10V
I
D
=9A
See Fig 6 & Fig 12
{ |
Gate-Source Charge
14.3
Gate-Drain (Miller) Charge
42.1
Symbol
Characteristics
Min.
Typ.
Max.
Units
Test Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
8
A
Integral reverse pn-diode
in the MOSFET
Pulsed-Source Current
x
32
Diode Forward Voltage
{
1.4
V
T
J
=25
°
C, I
S
=8A, V
GS
=0V
Reverse Recovery Time
560
ns
T
J
=25
°
C, I
F
=9A
di
F
/dt=100A/
μ
s
{
Reverse Recovery Charge
8.4
μ
C