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參數(shù)資料
| 型號(hào)： | SSH8N80A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL POWER MOSFET |
| 中文描述： | 8 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 249K |
| 代理商： | SSH8N80A |
1
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 25
μ
A (Max.) @ V
DS
= 800V
Lower R
DS(ON)
: 1.000
(Typ.)
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Symbol
Characteristics
Value
Units
V
DSS
Drain-to-Source Voltage
800
V
I
D
Continuous Drain Current (T
C
= 25
°
C)
Continuous Drain Current (T
C
= 100
°
C)
Drain Current-Pulsed
8
A
5.1
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
32
A
Gate-to-Source Voltage
±
30
V
Single Pulsed Avalanche Energy
444
mJ
Avalanche Current
8
A
Repetitive Avalanche Energy
24
mJ
Peak Diode Recovery dv/dt
2.0
V/ns
P
D
Total Power Dissipation (T
C
= 25
°
C)
Linear Derating Factor
240
1.92
W
W/
°
C
T
J
, T
STG
Operating Junction and Storage
Temperature Range
55 to +150
°
C
T
L
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
300
Symbol
Characteristics
Typ.
Max.
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
0.52
°
C/W
Case-to-Sink
0.24
Junction-to-Ambient
40
BV
DSS
= 800V
R
DS(ON)
= 1.5
I
D
= 8A
TO-3P
1. Gate 2. Drain 3. Source
3
2
1
N-CHANNEL POWER MOSFET
SSH8N80A
1999 Fairchild Semiconductor Corporation
REV. B
x
y
x
x
z
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