參數(shù)資料
型號: SP202
廠商: Polyfet RF Devices
英文描述: SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述: 硅柵增強型射頻功率VDMOS晶體管
文件頁數(shù): 2/2頁
文件大小: 36K
代理商: SP202
S2A 2 DIE ID & GM Vs VG
0.10
1.00
10.00
0
2
4
6
Vgs in Volts
8
10
12
14
I
Id
gM
S2A 2 DICE CAPACITANCE
0.1
1
10
100
0
5
10
20
25
30
VDS IN VOLT S
Coss
Ciss
Crss
S P 202 P OUT VS P IN Freq= 1000MHz, VDS = 28V, Idq= .4A
0
2
4
6
8
10
12
14
0
0.5
1
1.5
2
2.5
3
3.5
4
P IN IN WAT T S
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
Pout
Gain
Efficiency = 45%
1dB compression = 8 watts
POLYFET RF DEVICES
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
ID & GM VS VGS
IV CURVE
Zin Zout
PACKAGE DIMENSIONS IN INCHES
SP202
S2A 2 DIE IV
0
0.5
1
1.5
2
2.5
3
0
2
vg=2v
4
6
8
10
12
14
16
18
20
VVDS IN VOLTS
I
Vg=4v
vg=8v
0
vg=12v
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 03/28/2001
Tolerance .XX +/-0.01 .XXX +/-.005 inches
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