- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385854 > SP203 (Polyfet RF Devices) SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | SP203 |
| 廠商： | Polyfet RF Devices |
| 英文描述： | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 中文描述： | 硅柵增強(qiáng)型射頻功率VDMOS晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 34K |
| 代理商： | SP203 |
polyfet rf devices
SP203
10
Single Ended
AP
18.0
1.8
30.0
5.00 C/W
65
0.9
4.20
0.6
45
1.30
1.50
2.4
40
0.06
70
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Source
Voltage
Gate to
Source
Voltage
-65 C to 150 C
200 C
A
V
Load Mismatch Tolerance
VSWR
Drain to
Gate
Voltage
20:1
Relative
0.60
30.00
Ids =
mA, Vgs = 0V
V, Vgs = 0V
Ciss
Crss
Coss
Vds =
Idq =
A, Vds = V, F =
0.60
Bvdss
Idss
Drain Breakdown Voltage
V
mA
pF
pF
pF
Common Source Output Capacitance
Common Source Feedback Capacitance
Idq =
Idq = 0.60
1,000
Vgs = 20V, Ids =
Rdson
Saturation Resistance
Forward Transconductance
gM
Vds = 10V, Vgs = 5V
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
1,000
1,000
Common Source Input Capacitance
70
V
20
Igss
Vgs
Idsat
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Saturation Current
1
7
uA
V
Mho
Ohm
Amp
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
RF CHARACTERISTICS (
12.0
ABSOLUTE MAXIMUM RATINGS ( T =
Gps
A, Vds = V, F =
A, Vds = V, F =
Watts
V
1
MHz
MHz
MHz
Watts
Package Style
12.0
Vds = 0V Vgs = 30V
Vgs = 20V, Vds = 10V
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
28.0
Vds =
A, Vgs = Vds
Ids =
A
η
dB
%
o
o
o
"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER
TRANSISTOR
VDMOS
Vgs = 0V, F = 1 MHz
28.0
Vds =
Vgs = 0V, F = 1 MHz
28.0
Vds =
Vgs = 0V, F = 1 MHz
28.0
REVISION 03/28/2001
25 C )
WATTS OUTPUT )
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SP204 | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| SP204CP | 5V High-Speed RS-232 Transceivers with 0.1uF Capacitors |
| SP204CT | 5V High-Speed RS-232 Transceivers with 0.1uF Capacitors |
| SP204EP | 5V High-Speed RS-232 Transceivers with 0.1uF Capacitors |
| SP204ET | 5V High-Speed RS-232 Transceivers with 0.1uF Capacitors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SP20301 | 制造商:Hubbell Wiring Device-Kellems 功能描述:PS, IEC, ANG BOX, 20/30A, S/P |
| SP2030R0JLF | 制造商:TT Electronics / IRC 功能描述:SP2030R0JLF |
| SP2030R0KLF | 制造商:TT Electronics / IRC 功能描述:SP2030R0KLF |
| SP2030R1JLF | 制造商:TT Electronics / IRC 功能描述:SP2030R1JLF |
| SP2030R1KLF | 制造商:TT Electronics / IRC 功能描述:SP2030R1KLF |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。