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參數(shù)資料
| 型號： | SMM4F8.5A-TR |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-222AA |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大小： | 112K |
| 代理商： | SMM4F8.5A-TR |
SMM4F
Characteristics
5/10
Figure 9.
Leakage current versus junction temperature (typical values)
Figure 5.
Junction capacitance versus
reverse applied voltage (typical
values)
Figure 6.
Peak forward voltage drop versus
peak forward current (typical
values)
10
100
1000
10000
1
10
100
F=1 MHz
V
OSC=30 mVRMS
T
j=25 °C
SMM4F5.0A
SMM4F15A
SMM4F24A
SMM4F33A
C(pF)
V (V)
R
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T
j =25 °C
T
j =125 °C
I
(A)
FM
V
(V)
FM
Figure 7.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (printed
ciruit board FR4, SCu = 1 cm
2)
Figure 8.
Thermal resistance junction to
ambient versus copper surface
under each lead (printed circuit
board FR4, eCu = 35 m)
0.00
0.01
0.10
1.00
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
On recommended pad
layout
Zth(j-a)/Rth(j-a)
t (S)
p
40
60
80
100
120
140
160
180
200
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Rth(j-a)(°C/W)
S
(cm )
CU
2
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
25
50
75
100
125
150
175
V
R=VRM
V
BR≤11.7V
V
BR>11.7V
T (°C)
j
I (nA)
R
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