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參數(shù)資料
| 型號： | SMM4F8.5A-TR |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-222AA |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 112K |
| 代理商： | SMM4F8.5A-TR |
SMM4F
Characteristics
3/10
Figure 1.
Definition of IPP pulse
Table 4.
Electrical characteristics - parameter values (Tamb = 25 °C)
Type
IRM max@VRM
VBR @IR
(1)
VCL @IPP
10/1000 s
RD
(2)
10/1000 s
VCL @IPP
8/20 s
RD
8/20 s
αT(3)
25 °C 85 °C
min
typ
max
A
V
mA
V
A
Ω
VA
Ω
10-4/°C
SMM4F5.0A
10
50
5.0 6.46 6.80 7.14 10
9.2
43.5
0.047
13.4 174
0.04
5.7
SMM4F6.0A
10
50
6.0 6.65 7.00 7.35 10
10.3 38.8
0.076
13.7 170
0.04
5.9
SMM4F6.5A
10
50
6.5 7.13 7.50 7.88 10
11.2 37.5
0.093
14.5 160
0.04
6.1
SMM4F8.5A
10
50
8.5
9.5
10.0 10.5
1
14.4 27.7
0.141
19.5 124
0.07
7.3
SMM4F10A
0.2
1
10
11.4 12.0 12.6
1
17.0 23.5
0.187
21.7 106
0.09
7.8
SMM4F12A
0.2
1
12
13.3 14.0 14.7
1
19.9 20.1
0.259
25.3
91
0.12
8.3
SMM4F13A
0.2
1
13
14.3 15.0 15.8
1
21.5 18.6
0.309
27.2
85
0.13
8.4
SMM4F15A
0.2
1
15
17.1 18.0 18.9
1
24.4 16.4
0.335
32.5
71
0.19
8.8
SMM4F18A
0.2
1
18
20.9 22.0 23.1
1
29.2 14.0
0.436
39.3
59
0.27
9.2
SMM4F20A
0.2
1
20
22.8 24.0 25.2
1
32.4 12.0
0.600
42.8
54
0.33
9.4
SMM4F24A
0.2
1
24
26.6 28.01 29.4
1
38.9
9.5
1.00
50
46
0.47
9.6
SMM4F26A
0.2
1
26
28.5 30.0 31.5
1
42.1
9.0
1.18
53.5
43
0.51
9.7
SMM4F28A
0.2
1
28
31.4 33.0 34.7
1
45.4
8.0
1.34
59.0
39
0.62
9.8
SMM4F33A
0.2
1
33
37.1 39.0 41.0
1
53.3
7.0
1.76
69.7
33
0.87
10.0
1.
Pulse test: tp <50ms.
2.
To calculate maximum clamping voltage at other surge currents, use the following formula VCLmax = RD x IPP + VBRmax
3.
To calculate VBR versus junction temperature, use the following formula: VBR @ Tj = VBR @ 25 °C x (1 + αT x (Tj - 25))
100
50
%IPP
tr
tp
0
t
Repetitive peak pulse current
tr = rise time (s)
tp = pulse duration time (s)
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