參數(shù)資料
型號: SM706
廠商: Polyfet RF Devices
英文描述: SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述: 硅柵增強型射頻功率VDMOS晶體管
文件頁數(shù): 2/2頁
文件大?。?/td> 37K
代理商: SM706
S1A 6 DIE ID & GM Vs VG
1.00
10.00
100.00
I
0
2
4
6
Vgs in Volts
8
10
12
14
Id
gM
S1A 6 DICE CAPACITANCE
10
100
1000
0
5
10
20
25
30
V D S I N V O L T S
Coss
Ciss
Crss
S M 7 0 6 P i n v s P o u t F r e q = 1 7 5 M H z ,
V d s = 2 8 V d c , I d q = . 8 A
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
1 7 5
0
2
4
6
8
1 0
1 2
1 4
1 6
1 8
2 0
P i n i n W a t t s
9
1 0
1 1
1 2
1 3
1 4
Pout
Gain
Efficiency@120W = 72%
POLYFET RF DEVICES
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
ID & GM VS VGS
IV CURVE
Zin Zout
PACKAGE DIMENSIONS IN INCHES
SM706
S1A 6 DIE IV
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
vg=8v
14
16
18
20
VDS IN VOLTS
I
vg=2v
Vg=4v
0
vg=12v
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
01/28/2002
Tolerance .XX +/-0.01 .XXX +/-.005 inches
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